Phonon Scattering by a Grain Boundary in Silicon
As discussed in a recent review  thermal conductivity  and heat pulse  experiments have shown the interaction of phonons with grain boundaries to be weak and probably due to anharmonic coupling with the distortion field of the (static) boundary. Theoretical discussions of this mechanism have been based on formulations [4,5] developed before data on third-order elastic constants (TOECs) were available. The aim of the present paper is to analyze the heat pulse experiments of  using a theoretical framework[6–8] which, although lacking the attractive simplicity of Klemens approach[4,5], offers an exact description of the anharmonic interaction in terms of TOECs.
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