Abstract
Studies of polished Al2O3 surfaces by techniques such as LEED show that vacuum annealing at temperatures above 1400°C and H2 annealing at 1200°C, a chemical etching process, are both effective in producing well ordered surfaces [1]. Further evidence for this is that phonon reflection at H2 annealed surfaces has recently been shown to be very largely specular [2]. In the present work we have investigated whether similar treatments reduce the probability of inelastic scattering at Al2O3 surfaces and studied the decay and growth of holes arising from it.
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References
G.W. Cullen: 1978 in Heteroepitaxial semiconductors for electronic devices, (Springer-Verlag, New York) eds. G.W. Cullen and C.C. Wang, Chapter 2.
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We are very grateful to Mr W.B. Roys and to Mr C.G. Eddison and Dr M.N. Wybourne (GEC Hirst Research Laboratory) for their help with these treatments.
The samples also contain a small concentration of bubble defects although these do not appear to produce significant phonon scattering.
F.W. Sheard, G.A. Toombs and S.R. Williams: 1985. Proc 2nd Int. Conf. on Phonon Physics (Budapest, 1985) eds. J.Kollar, N.Kroo, K.Menyhard & T.Silkos (World Scientific Pubs. Co., Singapore) p435 and these proceedings.
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© 1986 Springer-Verlag Berlin Heidelberg
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Challis, L.J., Kenmuir, S.V.J., Heraud, A.P., Russell, P.A. (1986). Phonon Thermalization at Al2O3 Surfaces. In: Anderson, A.C., Wolfe, J.P. (eds) Phonon Scattering in Condensed Matter V. Springer Series in Solid-State Sciences, vol 68. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82912-3_54
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DOI: https://doi.org/10.1007/978-3-642-82912-3_54
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