Abstract
In aluminum-doped float-zone silicon the primary defects produced by low-temperature electron irradiation are isolated vacancies and interstitial aluminum. Interstitial silicon, produced along with the vacancy in the initial damage event, is assumed to migrate even at 4.2 K under the influence of ionizing electron irradiation and to displace substitutional aluminum, knocking it into an interstitial position [1].
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© 1986 Springer-Verlag Berlin Heidelberg
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Johnson, W.L., Granato, A.V. (1986). Ultrasonic Detection of Interstitial Aluminum in Silicon. In: Anderson, A.C., Wolfe, J.P. (eds) Phonon Scattering in Condensed Matter V. Springer Series in Solid-State Sciences, vol 68. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82912-3_42
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DOI: https://doi.org/10.1007/978-3-642-82912-3_42
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