Reliability Data Collection on IC and VLSI Devices Tested under Accelerated Life Conditions

  • D. M. Barry
  • M. Meniconi
Conference paper

Abstract

As part of a more general investigation into the reliability and failure causes of semiconductor devices, statistical samples of integrated circuit devices (LM741C) and dynamic random access memory devices (TMS4116) were tested destructively to failure using elevated temperature as the accelerating stress. The devices were operated during the life test and the failure data generated were collected automatically using a multiple question-and-answer program and a process control computer. The failure data were modelled from the lognormal, inverse Gaussian and Weibull distribution using an Arrhenius reaction rate model. The failed devices were later decapsulated for failure cause determination.

Keywords

Epoxy Styrene Encapsulation Folk 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Barry, D. M. and Vontas, D. C., “Statistical Reliability & Failure Arrhenius Models for Temperature Stressed Transistors,” Reliability in Electrical & Electric Components & Systems, North Holland 1982, pp. 239–242.Google Scholar
  2. 2.
    Barry, D. M., Meniconi, M., and Weir, N. A., “Statistical Reliability Modelling for Semiconductor Devices Decapsulated for Failure Pattern Determination,” Proc. IASTED International Conference, New Orleans, 1984, pp. 81–84.Google Scholar
  3. 3.
    Goldthwaite, L. R., “Failure Rate Study for the Lognormal Lifetime Model,” Proc. 7th National Symposium on Reliability and QC in Electronics, 1961, pp. 208–213.Google Scholar
  4. 4.
    Chhikara, R. S. and Folks, J. L., “Estimation of the Inverse Gaussian Distribution Function,” Journal of the American Statistical Association, 69(1974), pp.250–254.CrossRefMATHGoogle Scholar
  5. 5.
    Weibull, W., “A Statistical Distribution Function of Wide Applicability,” Journal of Applied Mechanics, September 1951, pp. 293–296.Google Scholar
  6. 6.
    West, J. W., “A Simple Technique for Analysis of ESD Failures of Dynamic RAMs Using Liquid Crystals,” IEEE/PROC. IRPS, (1982), pp. 185–187.Google Scholar
  7. 7.
    Weir, N. A., “Photo & Photo Oxidative Reactions of Styrene Polymers,” Developments in Degradation, 4, pp. 143–188, 1982.Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1986

Authors and Affiliations

  • D. M. Barry
    • 1
  • M. Meniconi
    • 1
  1. 1.Department of Electrical EngineeringLakehead UniversityThunder BayCanada

Personalised recommendations