Reliability Data Collection on IC and VLSI Devices Tested under Accelerated Life Conditions

  • D. M. Barry
  • M. Meniconi
Conference paper


As part of a more general investigation into the reliability and failure causes of semiconductor devices, statistical samples of integrated circuit devices (LM741C) and dynamic random access memory devices (TMS4116) were tested destructively to failure using elevated temperature as the accelerating stress. The devices were operated during the life test and the failure data generated were collected automatically using a multiple question-and-answer program and a process control computer. The failure data were modelled from the lognormal, inverse Gaussian and Weibull distribution using an Arrhenius reaction rate model. The failed devices were later decapsulated for failure cause determination.


Nematic Liquid Crystal Operational Amplifier Failure Data Inverse GAUSSIAN Hazard Rate Model 
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Copyright information

© Springer-Verlag Berlin, Heidelberg 1986

Authors and Affiliations

  • D. M. Barry
    • 1
  • M. Meniconi
    • 1
  1. 1.Department of Electrical EngineeringLakehead UniversityThunder BayCanada

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