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Depth Resolution in Profiling of Thin GaAs-GaAlAs Layers

  • J. Gavrilovic
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 44)

Abstract

Thin gallium-arsenide and gallium-aluminum-arsenide layers (usually called superlattices) are investigated with increasing frequency due to their remarkable electronic and optical properties. These structures, which consist of many (50 to 100 or more) layers of 15 to 500 angstrom thickness, are often doped with elements such as silicon, selenium, zinc, magnesium, etc. to alter their electronic and optical characteristics[1].

Keywords

Depth Profile Depth Resolution Aluminum Hydride Silicon Dopant Hydride Contribution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    P. Gavrilovic, K. Meehan, N. Holonyak, Jr., and K. Hess.Solid State Communications, Vol. 45 (1983), p. 803.ADSCrossRefGoogle Scholar
  2. 2.
    J.M. Brown, N. Holonyak, Jr., M. J. Ludowise, W.D. Dietz, and C.R. Lewis, Electronic Letters, Vol. 20 (1984), p. 204.ADSGoogle Scholar
  3. 3.
    C.W. Magee, R.E. Honig, and C.A. Evans, Jr., Springer Series in Chemical Physics, Vol. 19 (Springer, Berlin, Heidelberg, NY 1982 ), p. 172.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • J. Gavrilovic
    • 1
  1. 1.W.C. McCrone AssociatesInc.ChicagoUSA

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