Depth Resolution in Profiling of Thin GaAs-GaAlAs Layers
Thin gallium-arsenide and gallium-aluminum-arsenide layers (usually called superlattices) are investigated with increasing frequency due to their remarkable electronic and optical properties. These structures, which consist of many (50 to 100 or more) layers of 15 to 500 angstrom thickness, are often doped with elements such as silicon, selenium, zinc, magnesium, etc. to alter their electronic and optical characteristics.
KeywordsDepth Profile Depth Resolution Aluminum Hydride Silicon Dopant Hydride Contribution
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