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SIMS Depth Profiling of Si in GaAs

  • F. R. Shepherd
  • W. Vandervorst
  • W. M. Lau
  • W. H. Robinson
  • A. J. SpringThorpe
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 44)

Abstract

The controllable doping of GaAs layers by silicon, either by ion implantation or by incorporation during molecular beam epitaxial growth, is a critical step in III–V device fabrication. We have therefore undertaken a study to determine the optimum experimental conditions for SIMS depth profiling Si in GaAs, for Si+ implanted into GaAs, and for thin, abrupt GaAs/A1GaAs MBE layers doped with Si.

Keywords

Primary Beam GaAs Layer High Mass Resolution Spectrum Controllable Doping GaAs Wafer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • F. R. Shepherd
    • 1
  • W. Vandervorst
    • 2
  • W. M. Lau
    • 3
  • W. H. Robinson
    • 3
  • A. J. SpringThorpe
    • 1
  1. 1.BNROttawaCanada
  2. 2.IMECHeverleeBelgium
  3. 3.University of Western OntarioLondonCanada

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