SIMS Analysis of Contamination Due to Ion Implantation
The introduction of metallic impurities into a VLSI process can adversely affect device yield and performance [1–4]. Ion implantation would be expected to be relatively free of contamination because of the mass filtering of the ion beam. However, several studies [5–7] indicate that an ion implantation machine can introduce contamination due to sputtering of apertures and other components by the ion beam. Many ion implantation parts are manufactured from commercial grades of stainless steel or Al alloys. Therefore, Fe, Ni, Cr, Al, and Mg are possible contaminants. Other elements commonly present in parts exposed to the beam and susceptible to sputtering are C, Cu, and Ta.
KeywordsAuger Kelly Vasile Haas
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- 1.Helmut F. Wolf: Silicon Semiconductor Data ( Pergamon, Oxford 1969 ) P. 133–159Google Scholar