SIMS Analysis of Contamination Due to Ion Implantation

  • F. A. Stevie
  • M. J. Kelly
  • J. M. Andrews
  • W. Rumble
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 44)


The introduction of metallic impurities into a VLSI process can adversely affect device yield and performance [1–4]. Ion implantation would be expected to be relatively free of contamination because of the mass filtering of the ion beam. However, several studies [5–7] indicate that an ion implantation machine can introduce contamination due to sputtering of apertures and other components by the ion beam. Many ion implantation parts are manufactured from commercial grades of stainless steel or Al alloys. Therefore, Fe, Ni, Cr, Al, and Mg are possible contaminants. Other elements commonly present in parts exposed to the beam and susceptible to sputtering are C, Cu, and Ta.


Metallic Impurity Auger Analysis Implantation System Stainless Steel Component VLSI Process 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • F. A. Stevie
    • 1
  • M. J. Kelly
    • 1
  • J. M. Andrews
    • 2
  • W. Rumble
    • 3
  1. 1.AT & T Bell LaboratoriesAllentownUSA
  2. 2.AT & T Bell LaboratoriesMurray HillUSA
  3. 3.AT & T Bell Technology SystemsAllentownUSA

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