SIMS Imaging of Silicon Defects
The ability to simultaneously measure quantitative SIMS profiles and ion microscope images has been recently achieved . This ability, coupled with digital image storage and processing,provides a powerful tool for silicon defect characterization. Examples presented here include oxygen precipitation and the coaggregation of O and C in thermally processed, carbon-doped silicon.
KeywordsDope Silicon Oxygen Profile Carbon Profile Charge Pulse Instrumental Artifact
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