SIMS Imaging of Silicon Defects

  • R. S. Hockett
  • D. A. Reed
  • D. H. Wayne
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 44)


The ability to simultaneously measure quantitative SIMS profiles and ion microscope images has been recently achieved [1]. This ability, coupled with digital image storage and processing,provides a powerful tool for silicon defect characterization. Examples presented here include oxygen precipitation and the coaggregation of O and C in thermally processed, carbon-doped silicon.


Dope Silicon Oxygen Profile Carbon Profile Charge Pulse Instrumental Artifact 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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    R. W. Odom, D. H. Wayne and C. A. Evans, Jr.: Secondary Ion Mass Spectrometry SIMS IV, Ed. A. Benninghoven, , Springer-Verlag, New York 1984, pp. 186–188.Google Scholar
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    F. Shimura, W. Dyson, J. W. Moody and R. S. Hockett: VLSI Science and Technology/1985, Ed. W. M. Bullis and S. Broydo, ECS Vol. 85–5, (1985) p. 507.Google Scholar
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    Private communication, G. K. Fraundorf, Monsanto Electronic Materials Company.Google Scholar
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    F. Shimura, R. S. Hockett, D. A. Reed and D. H. Wayne, Applied Physics Letters, 47, 794 (1985).ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • R. S. Hockett
    • 1
  • D. A. Reed
    • 2
  • D. H. Wayne
    • 2
  1. 1.Monsanto Electronic Materials CompanySt. LouisUSA
  2. 2.Charles Evans & AssociatesSan MateoUSA

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