Abstract
Since gallium arsenide (GaAs) is both piezoelectric and semiconducting, it offers the opportunity of integrating passive Rayleigh wave components with active circuits. Judged by its Rayleigh wave properties alone, GaAs is not an attractive substrate material. Its piezoelectric coupling is slightly less than quartz and its attenuation slightly higher. In spite of these shortcomings, much effort has been expended to develop surface acoustic wave (SAW) components on GaAs for integration with electronics. This paper will review surface acoustic wave technology on gallium arsenide considering SAW propagation characteristics, transduction techniques, and unique device structures afforded by the piezoelectric semiconductor properties.
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Webster, R.T., Carr, P.H. (1985). Rayleigh Waves on Gallium Arsenide. In: Ash, E.A., Paige, E.G.S. (eds) Rayleigh-Wave Theory and Application. Springer Series on Wave Phenomena, vol 2. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82621-4_11
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DOI: https://doi.org/10.1007/978-3-642-82621-4_11
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