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RHEED and Photoemission Studies of Semiconductors Grown in-situ by MBE

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Dynamical Phenomena at Surfaces, Interfaces and Superlattices

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 3))

Abstract

The electronic and crystallographic structure of semiconductor surfaces and interfaces is important not only fundamentally but also practically for the emerging range of low-dimensionality device structures [1]. The growth technique of molecular beam epitaxy (MBE) based on ultra high vacuum has been used successfully in both areas and it has been demonstrated that film properties can be related to surface conditions during growth [2] .

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Author information

Authors and Affiliations

  1. Philips Research Laboratories, NL-5600 JA, Eindhoven, The Netherlands

    P. K. Larsen

  2. Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK

    B. A. Joyce & P. J. Dobson

Authors
  1. P. K. Larsen
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  2. B. A. Joyce
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  3. P. J. Dobson
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Editor information

Editors and Affiliations

  1. Dipartimento di Fisica, Università di Modena, Via Campi 213/A, I-41100, Modena, Italy

    Fabrizio Nizzoli

  2. IBM Forschungslaboratorium, Saeumerstraße 4, CH-8803, Rueschlikon, Switzerland

    Karl-Heinz Rieder

  3. Department of Physics, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, Great Britain

    Roy F. Willis

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© 1985 Springer-Verlag Berlin Heidelberg

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Larsen, P.K., Joyce, B.A., Dobson, P.J. (1985). RHEED and Photoemission Studies of Semiconductors Grown in-situ by MBE. In: Nizzoli, F., Rieder, KH., Willis, R.F. (eds) Dynamical Phenomena at Surfaces, Interfaces and Superlattices. Springer Series in Surface Sciences, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82535-4_21

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  • DOI: https://doi.org/10.1007/978-3-642-82535-4_21

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82537-8

  • Online ISBN: 978-3-642-82535-4

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