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Weak Localization in Silicon Mosfets: Isotropic and Anisotropic Two-Dimensional Electron Gases

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Book cover Localization, Interaction, and Transport Phenomena

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 61))

Abstract

In this paper we review measurements in the weak localization regime of silicon mosfets. We first present data on isotropic (100 and 111) devices and discuss the magnetoresistance and temperature-dependent resistivity which provide support for the scaling theory of localization in two dimensions. We then discuss more recent measurements on anisotropic devices (110) which provide the first parameter-free test for the scaling theory in two dimensions.

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References

  1. E. Abrahams, P. W. Anderson, D. C. Licciardello and T. V. Ramakrishnan: Phys. Rev. Lett. 42, 673 (1979).

    Article  Google Scholar 

  2. G. J. Dolan and D. D. Osheroff: Phys. Rev. Lett. 43, 721 (1979).

    Article  CAS  Google Scholar 

  3. D. J. Bishop, D. C. Tsui and R. C. Dynes: Phys. Rev. Lett. 44, 1153 (1980); Phys. Rev. B26, 773 (1982).

    Article  CAS  Google Scholar 

  4. H. Fukuyama: Surf. Sci. 113, 489 (1982).

    Article  CAS  Google Scholar 

  5. S. Hikami, A. I. Larkin and Y. Nagaoka: Prog. Theor. Phys. 63, 707 (1980).

    Article  Google Scholar 

  6. P. A. Lee and T. V. Ramakrishnan: Phys. Rev. B26, 4009 (1982).

    Google Scholar 

  7. Y. Kawaguchi and S. Kawaji: J. Phys. Soc. JPN. 48, 699 (1980).

    Article  CAS  Google Scholar 

  8. R. Wheeler: Phys. Rev. B24, 4645 (1981).

    Google Scholar 

  9. R. A. Davies, M. J. Uren and M. Pepper: J. Phys. C14, L531 (1981).

    Google Scholar 

  10. E. Abrahams, P. W. Anderson, P. A. Lee and T. V. Ramakrishnan: Phys. Rev. B24, 6783 (1981).

    Google Scholar 

  11. A. E. White, R. C. Dynes and J. P. Garno: Phys. Rev. B29, 3694 (1984).

    Google Scholar 

  12. H. C. Montgomery: J. Appl. Phys. 42, 2971 (1971)

    Article  CAS  Google Scholar 

  13. B. F. Logan, S. O. Rice and R. F. Wick: J. Appl. Phys. 42, 2975 (1971).

    Article  Google Scholar 

  14. H. Sakaki and T. Sugano: JPN. J. Appl. Phys. Suppl. 41, 141 (1972).

    Google Scholar 

  15. P. Wolfle and R. N. Bhatt: Phys. Rev. B30 (1984)

    Google Scholar 

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Author information

Author notes

  1. D. C. Tsui

    Present address: Princeton University, Princeton, New Jersey, USA

Authors and Affiliations

  1. AT&T Bell Laboratories, 600 Mountain Avenue, 07974, Murray Hill, NJ, USA

    D. J. Bishop, D. C. Tsui & R. C. Dynes

Authors
  1. D. J. Bishop
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  2. D. C. Tsui
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  3. R. C. Dynes
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Editor information

Editors and Affiliations

  1. Physikalisch-Technische Bundesanstalt Braunschweig, Postfach 3345, D-3300, Braunschweig, Fed. Rep. of Germany

    Bernhard Kramer

  2. Kernforschungsanlage Jülich, Institut für Festkörperforschung, Postfach 1913, D-5170, Jülich, Fed. Rep. of Germany

    Gerd Bergmann

  3. Laboratorium voor Vaste Stof-Fysika en Magnetisme, Celestijnenlaan 200 D, B-3030, Leuven, Belgium

    Yvan Bruynseraede

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© 1985 Springer-Verlag Berlin Heidelberg

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Bishop, D.J., Tsui, D.C., Dynes, R.C. (1985). Weak Localization in Silicon Mosfets: Isotropic and Anisotropic Two-Dimensional Electron Gases. In: Kramer, B., Bergmann, G., Bruynseraede, Y. (eds) Localization, Interaction, and Transport Phenomena. Springer Series in Solid-State Sciences, vol 61. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82516-3_4

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  • DOI: https://doi.org/10.1007/978-3-642-82516-3_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82518-7

  • Online ISBN: 978-3-642-82516-3

  • eBook Packages: Springer Book Archive

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