Abstract
In recent years the understanding of electron transport in metallic systems with random impurities has advanced dramatically. Since the original predictions of one-dimensional (1D) localization by THOULESS [1], localization theory has been developed more formally, and has been justified by microscopic calculations [2]. Some of the predictions for two-dimensional (2D) systems have been verified by experiments on metal films or MOSFETs [3]. Many experiments in recent years have attempted to verify the ID predictions by Thouless; however, despite significant experimental effort, there has not been a clear verification of the predictions for ID metallic wires. In the earliest experiments [4,5], it appeared that the results could be interpreted in terms of ID localization theory. However, very large inelastic scattering rates, much larger than usual electron-phonon rates, were required. These large inelastic scattering rates remain unexplained. In subsequent experiments [6–8] ID localization effects appeared to be absent. Thus, significant issues on electron transport in ID systems remained open—as to whether real one-dimensional systems differ subtly (but critically) from the model understood by theory, and whether new pathways for electron energy loss (inelastic scattering) occur in such lower-dimensional metals.
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Prober, D.E., Wind, S., Santhanam, P. (1985). Fluctuation and Localization Effects in Quasi-One-Dimensional Metallic Structures. In: Kramer, B., Bergmann, G., Bruynseraede, Y. (eds) Localization, Interaction, and Transport Phenomena. Springer Series in Solid-State Sciences, vol 61. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82516-3_15
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DOI: https://doi.org/10.1007/978-3-642-82516-3_15
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