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The Geometric Structure of the (2 × 2) GaAs(111) Surface

  • G. Xu
  • S. Y. Tong
  • W. N. Mei
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 2)

Abstract

We present results of a reconstruction model proposed for the (2 × 2) GaAs (111) surface. Our model suggests similar reconstruction mechanisms for the (111) and (110) surfaces. In both cases, surface electronic energies are lowered via orbital rehybridization between nearest-neighbor Ga and As atoms with dangling bonds.

Keywords

Reconstruction Model Dangling Bond LEED Pattern Surface Unit Cell Reconstruction Mechanism 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • G. Xu
    • 1
  • S. Y. Tong
    • 2
  • W. N. Mei
    • 2
  1. 1.Department of PhysicsZhongshan UniversityGuangzhouChina
  2. 2.Department of Physics and Laboratory for Surface StudiesUniversity of Wisconsin-MilwaukeeMilwaukeeUSA

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