The Geometric Structure of the (2 × 2) GaAs(111) Surface

  • G. Xu
  • S. Y. Tong
  • W. N. Mei
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 2)


We present results of a reconstruction model proposed for the (2 × 2) GaAs (111) surface. Our model suggests similar reconstruction mechanisms for the (111) and (110) surfaces. In both cases, surface electronic energies are lowered via orbital rehybridization between nearest-neighbor Ga and As atoms with dangling bonds.


Reconstruction Model Dangling Bond LEED Pattern Surface Unit Cell Reconstruction Mechanism 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • G. Xu
    • 1
  • S. Y. Tong
    • 2
  • W. N. Mei
    • 2
  1. 1.Department of PhysicsZhongshan UniversityGuangzhouChina
  2. 2.Department of Physics and Laboratory for Surface StudiesUniversity of Wisconsin-MilwaukeeMilwaukeeUSA

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