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Optical Properties of Polycrystalline Silicon Films

  • Günther Harbeke
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 57)

Abstract

Polycrystalline silicon layers have many important applications in microelectronics, such as gates, interconnects, and load resistors. The morphology and surface topography of these layers can strongly influence device performance especially in thin-film layered structures with fine device geometries. Structural properties, as influenced by deposition and processing parameters, can have an appreciable effect on the electrical properties of the layers for a given level of dopant [1]. Surface asperities and “bumps” on the initial silicon layer surface may lead to a lowering of the dielectric field strength and enhanced tunneling currents in interfacing dielectrics [2, 3].

Keywords

Amorphous Silicon Silicon Layer Silicon Film Polycrystalline Silicon Amorphous Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    K.C. Saraswat, Symposium Proceedings of the Materials Research Society, Vol.5, p. 261 (1982).CrossRefGoogle Scholar
  2. 2.
    E.A. Irene J. Electrochem. Soc. 127, 705 (1980).CrossRefGoogle Scholar
  3. 3.
    R.B. Marcus, T.T. Sheng and P. Lin, J. Electrochem. Soc. 129, 1282 (1982).CrossRefGoogle Scholar
  4. 4.
    G. Harbeke, L. Krausbauer, E.F. Steigmeier, A.E. Widmer, H.F. Kappert and G. Neugebauer, Appl. Phys. Lett. 42, 249 (1983).CrossRefGoogle Scholar
  5. 5.
    G. Harbeke, L. Krausbauer, E.F. Steigmeier, A.E. Widmer, H.F. Kappert, and G. Neugebauer, J. Electrochem. Soc. 131, 675 (1984).CrossRefGoogle Scholar
  6. 6.
    M. Sternheim, E. Kinsbron, J. Alspector and P.A. Heimann, J. Electrochem. Soc. 130, 1735 (1983).CrossRefGoogle Scholar
  7. 7.
    G. Harbeke, L. Krausbauer, E.F. Steigmeier, A.E. Widmer, H.F. Kappert and G. Neugebauer, RCA Review 44, 287 (1983).Google Scholar
  8. 8.
    M.T. Duffy, J.T. McGinn, J.M. Shaw, R.T. Smith, R.A. Soltis and G. Harbeke, RCA Review 44, 313 (1983).Google Scholar
  9. 9.
    L. Faraone, in: Insulating Films on Semiconductors, J.F. Verweij and D.R. Wolters, Eds., North-Holland, Amsterdam, 1983, p. 252.Google Scholar
  10. 10.
    See, e.g., Light Scattering in Solids, M. Cardona and G. Güntherodt, Eds., Vol. 1, 1983; Vol. 2, 1982, Vol. 3, 1982, Vol. 4, 1984, Springer, Berlin.Google Scholar
  11. 11.
    J.F. Morhange, G. Kanellis and M. Balkanski, Solid State Commun. 31, 805 (1979).CrossRefGoogle Scholar
  12. 12.
    Z. Iqbal and S. Veprek, J. Phys. C 15, 377 (1982).CrossRefGoogle Scholar
  13. 13.
    H. Richter, Z.P. Wang and L. Ley, Solid State Commun., 39, 625 (1981).CrossRefGoogle Scholar
  14. 14.
    R. Tsu, M. Izu, S.R. Ovshinsky and F.H. Pollak, Solid State Commun. 36, 817 (1980).CrossRefGoogle Scholar
  15. 15.
    E.F. Steigmeier and H. Auderset, RCA Review 44, 5 (1983).Google Scholar
  16. 16.
    E.F. Steigmeier and H. Auderset, J. Electrochem. Soc. 131, 1693 (1984).CrossRefGoogle Scholar
  17. 17.
    See, e.g., D.L. Greenaway and G. Harbeke, Optical Properties and Band Structure of Semiconductors, Pergamon Press, Oxford, 1968Google Scholar
  18. 18.
    G. Harbeke, E. Meier, J.R. Sandercock, M. Tgetgel, M.T. Duffy and R.A. Soltis, RCA Review 44, 19 (1983).Google Scholar
  19. 19.
    J.M. Elson and J.M. Bennett, Opt. Engineering 18, 116 (1979).Google Scholar
  20. 20.
    R.H. Ritchie, Surf. Sci. 34, 1(1973).CrossRefGoogle Scholar
  21. 21.
    See, e.g. P.J. Zanzucchi and M. Duffy, Appl. Opt. 17,_3477 (1978).CrossRefGoogle Scholar
  22. 22.
    D.L. Decker, J.M. Bennett, M.J. Soileau, J.O. Porteus and H.E. Bennett, Opt. Engineering 17, 160 (1977).Google Scholar
  23. 23.
    L.J. Cunningham and A.J. Braundmeier, Jr., Phys. Rev. B14, 479 (1976).Google Scholar
  24. 24.
    M.T. Duffy, J.F. Corboy, G.W. Cullen, R.T. Smith, R.A. Soltis, G. Harbeke, J.R. Sandercock and M. Blumenfeld, J. Cryst. Growth 58, 10 (1982).Google Scholar
  25. 25.
    Ch. Kühl, H. Schlötterer and F. Schwidefsky, J. Electrochem. Soc. 121, 1496 (1974).CrossRefGoogle Scholar
  26. 26.
    D.E. Aspnes, A.A. Studna and E. Kinsbron, Phys. Rev. B29, 768 (1984).Google Scholar
  27. 27.
    Z. Iqbal, F.A. Sarott and S. Vepřek, J. Phys. C 16, 2005 (1983).CrossRefGoogle Scholar
  28. 28.
    D.E. Aspnes and A.A. Studna, Appl. Opt. 14, 220(1975); Rev. Sci. Instrum. 49, 291 (1978).CrossRefGoogle Scholar
  29. 29.
    B.G. Bagley, D.E. Aspnes, A.C. Adams and C.J. Mogab, Appl. Phys. Lett. 38, 56 (1981).CrossRefGoogle Scholar
  30. 30.
    D.A.G. Bruggeman, Ann.Phys. (Leipzig) 24, 636 (1935).Google Scholar
  31. 31.
    B.G. Bagley, D.E. Aspnes, G.K. Celler and A.C. Adams, in: Laser and Electron-beam Interaction with Solids, B.R. Appleton and C.K. Celler, Eds., Elsevier, 1982.Google Scholar
  32. 32.
    D.E. Aspnes, J.B. Theeten and F. Hottier, Phys. Rev. B20, 3292 (1979).Google Scholar
  33. 33.
    D.E. Aspnes, A.A. Studna and E. Kinsbron, Phys. Rev. B29, 768 (1984).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • Günther Harbeke
    • 1
  1. 1.Laboratories RCA Ltd.ZürichSwitzerland

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