Abstract
Polycrystalline silicon layers have many important applications in microelectronics, such as gates, interconnects, and load resistors. The morphology and surface topography of these layers can strongly influence device performance especially in thin-film layered structures with fine device geometries. Structural properties, as influenced by deposition and processing parameters, can have an appreciable effect on the electrical properties of the layers for a given level of dopant [1]. Surface asperities and “bumps” on the initial silicon layer surface may lead to a lowering of the dielectric field strength and enhanced tunneling currents in interfacing dielectrics [2, 3].
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Harbeke, G. (1985). Optical Properties of Polycrystalline Silicon Films. In: Harbeke, G. (eds) Polycrystalline Semiconductors. Springer Series in Solid-State Sciences, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82441-8_9
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DOI: https://doi.org/10.1007/978-3-642-82441-8_9
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