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Beam Induced Current Characterization in Polycrystalline Semiconductors

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Polycrystalline Semiconductors

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 57))

Abstract

A finely focused light or electron beam can act as a localized source of excess carriers in semiconductors. If the semiconductor contains an internal field, for instance due to a p-n junction, the injected electrons and holes will be driven into opposite directions and produce a current in an external circuit. This signal carries considerable information on the electrical properties of the material and can be used, for instance, to determine carrier lifetime. By scanning the beam over the sample surface and monitoring the induced current, an image of the sample is obtained which can reveal the presence of crystal defects.

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Author information

Authors and Affiliations

  1. CNR-Istituto LAMEL, Via Castagnoli 1, I-40126, Bologna, Italy

    C. Donolato

Authors
  1. C. Donolato
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Editor information

Editors and Affiliations

  1. Laboratories RCA Ltd., Badenerstr. 569, CH-8048, Zürich, Switzerland

    Günther Harbeke

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© 1985 Springer-Verlag Berlin Heidelberg

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Donolato, C. (1985). Beam Induced Current Characterization in Polycrystalline Semiconductors. In: Harbeke, G. (eds) Polycrystalline Semiconductors. Springer Series in Solid-State Sciences, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82441-8_8

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  • DOI: https://doi.org/10.1007/978-3-642-82441-8_8

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82443-2

  • Online ISBN: 978-3-642-82441-8

  • eBook Packages: Springer Book Archive

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