Abstract
The static and dynamic electrical properties of a grain boundary are calculated within linear response theory. In particular, the admittance of a double-Schottky-type potential barrier is determined self-consistently, including the contribution of deep bulk traps. Relaxation effects are found due to the finite response time of both, the interface and the bulk defect states. Contrary to the interface, the time constants of the deep traps do not depend on bias and therefore give rise to a dispersion in the conductance and capacitance under zero bias conditions. Such a behavior is experimentally observed for the electrically active grain boundaries in ZnO varistors.
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Any prefactors in (12) have been neglected for the present first comparison.
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© 1985 Springer-Verlag Berlin Heidelberg
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Blatter, G., Greuter, F. (1985). Electrical Properties of Grain Boundaries in the Presence of Deep Bulk Traps. In: Harbeke, G. (eds) Polycrystalline Semiconductors. Springer Series in Solid-State Sciences, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82441-8_7
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DOI: https://doi.org/10.1007/978-3-642-82441-8_7
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