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Polycrystalline Semiconductors pp 76–94Cite as

Electronic Properties of Grain Boundaries

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 57))

Abstract

This contribution discusses methods for the determination of the density of states at grain boundaries in polycrystalline semiconducting films and bicrystals. All methods are based on measurements of the electronic transport of majority carriers. The doping method reveals the dominance of band tails in the density of states of fine-grained films of Si and GaAs. This is confirmed by photocapacitance measurements at a grain boundary in a Si bicrystal. Ac-measurements on bicrystals are described within the framework of the “trap transistor model”. General solutions of this model are given in graphical form. It allows for the evaluation of the density of states and the capture cross section for majority carriers. Moreover, potential fluctuations at grain boundaries are resolved and a correlation of electronic and structural properties can be carried out. The application of this technique to a grain boundary in a Si bicrystal indicates that the interface charge is caused by secondary dislocations.

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Author information

Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-7000, Stuttgart 80, Germany

    Jürgen Werner

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  1. Jürgen Werner
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Editor information

Editors and Affiliations

  1. Laboratories RCA Ltd., Badenerstr. 569, CH-8048, Zürich, Switzerland

    Günther Harbeke

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© 1985 Springer-Verlag Berlin Heidelberg

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Werner, J. (1985). Electronic Properties of Grain Boundaries. In: Harbeke, G. (eds) Polycrystalline Semiconductors. Springer Series in Solid-State Sciences, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82441-8_5

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  • DOI: https://doi.org/10.1007/978-3-642-82441-8_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82443-2

  • Online ISBN: 978-3-642-82441-8

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