Advertisement

Electronic Structure of Metal Overlayers on Si(111) Surface

  • H. Nagayoshi
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 59)

Abstract

There has been a long history of research into the electronic properties of metal-semiconductor interfaces. Recently a large amount has dealt with semiconductor surfaces with chemisorbed metal atoms in the sub-monolayer range. For such systems various types of superlattice structures are observed. Many experimental works are devoted to the determination of atomic arrangement [1–4] in these systems by the use of such methods as low energy electron diffraction (LEED), ion scattering spectroscopy (ISS), extended X ray absorption fine structure (EXAFS), and photoelectron diffraction. Their electronic stucture [5–7] is also extensively investigated by, for example, angle — resolved ultraviolet photoemission spectroscopy (ARUPS).

Keywords

Surface Brillouin Zone Ultraviolet Photoemission Spectroscopy Photoelectron Diffraction Occupied Surface State Threefold Hollow Site 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    M. Saitoh, F. Shoji, K. Oura, and T. Hanawa, Japan. J. Appl. Phys. 19 (1980) L421.CrossRefGoogle Scholar
  2. 2.
    Y. Terada, T. Yoshizuka, K. Oura, and T. Hanawa, Surface Sci. 114 (1982) 65.CrossRefGoogle Scholar
  3. 3.
    J. Stohr, R. Jaeger, G. Rossi, T. Kendelewicz, and I. Lindau, Surface Sci. 134 (1983) 813.CrossRefGoogle Scholar
  4. 4.
    S. Kono, H. Sakurai, K. Higashiyama, and T. Sagawa, Surface Sci. 130 (1983) L299.CrossRefGoogle Scholar
  5. 5.
    F. Wehking, H. Beckermann, and R. Niedermayer, Surface Sci. 71 (1978) 364.CrossRefGoogle Scholar
  6. 6.
    G.V. Hansson, R.Z. Bachrach, R.S. Bauer, and P. Chiaradia, Phys. Rev. Letters, 46 (1981) 1033.CrossRefGoogle Scholar
  7. 7.
    T. Yokotsuka, S. Kono, S. Suzuki, and T. Sagawa, Surface Sci. 127 (1983) 35.CrossRefGoogle Scholar
  8. 8.
    M. Schluter, J.R. Chelikowsky, S.G. Louie, and M.L. Cohen, Phys. Rev. B12 (1975) 4200.Google Scholar
  9. 9.
    K.M. Ho, M.L. Cohen, and M. Schluter, Phys. Rev, B15 (1977) 3888.Google Scholar
  10. 10.
    H. Nagayoshi and M. Tsukada, Surface Sci. 116 (1982) 163.CrossRefGoogle Scholar
  11. 11.
    J.E. Northrup, Phys. Rev. Letters 53 (1984) 683.CrossRefGoogle Scholar
  12. 12.
    H.I. Zhang and M. Schluter, Phys. Rev. B18 (1978) 1923.Google Scholar
  13. 13.
    J.P. Perdew and A. Zunger, Phys. Rev. B23 (1981) 5048.Google Scholar
  14. 14.
    E. Louis, F. Flores, F. Guinea, and C. Tejedor, Solid State Commun. 44 (1982) 1633.CrossRefGoogle Scholar
  15. 15.
    G.B. Bachelet, D.R. Hamann, and M. Schluter, Phys. Rev. B26 (1982) 4199.Google Scholar
  16. 16.
    L. Kleinman and Ed Caruthers, Phys. Rev. B10 (1974) 3213.Google Scholar
  17. 17.
    T. Hoshino, Surface Sci. 121 (1982) 1.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • H. Nagayoshi
    • 1
  1. 1.Department of Material Physics, Faculty of Engineering ScienceOsaka UniversityToyonaka, Osaka 560Japan

Personalised recommendations