Electronic Structure of Metal Overlayers on Si(111) Surface
There has been a long history of research into the electronic properties of metal-semiconductor interfaces. Recently a large amount has dealt with semiconductor surfaces with chemisorbed metal atoms in the sub-monolayer range. For such systems various types of superlattice structures are observed. Many experimental works are devoted to the determination of atomic arrangement [1–4] in these systems by the use of such methods as low energy electron diffraction (LEED), ion scattering spectroscopy (ISS), extended X ray absorption fine structure (EXAFS), and photoelectron diffraction. Their electronic stucture [5–7] is also extensively investigated by, for example, angle — resolved ultraviolet photoemission spectroscopy (ARUPS).
KeywordsSurface Brillouin Zone Ultraviolet Photoemission Spectroscopy Photoelectron Diffraction Occupied Surface State Threefold Hollow Site
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- 8.M. Schluter, J.R. Chelikowsky, S.G. Louie, and M.L. Cohen, Phys. Rev. B12 (1975) 4200.Google Scholar
- 9.K.M. Ho, M.L. Cohen, and M. Schluter, Phys. Rev, B15 (1977) 3888.Google Scholar
- 12.H.I. Zhang and M. Schluter, Phys. Rev. B18 (1978) 1923.Google Scholar
- 13.J.P. Perdew and A. Zunger, Phys. Rev. B23 (1981) 5048.Google Scholar
- 15.G.B. Bachelet, D.R. Hamann, and M. Schluter, Phys. Rev. B26 (1982) 4199.Google Scholar
- 16.L. Kleinman and Ed Caruthers, Phys. Rev. B10 (1974) 3213.Google Scholar