Electronic Structure of Metal Overlayers on Si(111) Surface
There has been a long history of research into the electronic properties of metal-semiconductor interfaces. Recently a large amount has dealt with semiconductor surfaces with chemisorbed metal atoms in the sub-monolayer range. For such systems various types of superlattice structures are observed. Many experimental works are devoted to the determination of atomic arrangement [1–4] in these systems by the use of such methods as low energy electron diffraction (LEED), ion scattering spectroscopy (ISS), extended X ray absorption fine structure (EXAFS), and photoelectron diffraction. Their electronic stucture [5–7] is also extensively investigated by, for example, angle — resolved ultraviolet photoemission spectroscopy (ARUPS).
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