Abstract
It’s well established now that the laser annealing of high dose ion-implanted silicon allows one to obtain large concentrations of impurities well above the thermal solubility limit |1|, giving very low sheet resistivity, in the absence of microscopic defects. The fundamental properties of these extremely heavily doped layers have received considerable attention |2–5|. Much effort has been spent studying the effect of doping on the band structure of silicon using optical techniques such as optical absorption and ellipsometry measurements |2,3|. These effects can affect seriously the characteristics of devices.
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Slaoui, A., Fogarassy, E., Siffert, P. (1984). Optical and Electrical Properties of Laser Annealed Heavily Doped Silicon. In: Bäuerle, D. (eds) Laser Processing and Diagnostics. Springer Series in Chemical Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82381-7_9
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DOI: https://doi.org/10.1007/978-3-642-82381-7_9
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