Laser Diagnostic Studies of Plasma Etching and Deposition
Laser excited fluorescence spectroscopy was used to determine that CF2 radicals control the silicon dioxide to silicon etch ratio in fluorocarbon discharges used to etch silicon and silicon dioxide. CF2 was found to control the etch ratio through polymer formation which selectively inhibits the silicon etch rate.
KeywordsEtch Rate Polymer Formation Plasma Etching Sandia National Laboratory Silicon Etch
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- 7.S. Pang and S.R.J. Brueck: In Laser Diagnostics and Photochemical Processino for Semiconductor Devices, ed. by R.M. Osgood, S.R.J. Brueck, and H.R. Schlossberg ( North-Holland, New York, 1983 ) p. 161Google Scholar