Laser Diagnostic Studies of Plasma Etching and Deposition

  • P. J. HargisJr.
  • R. W. Light
  • J. M. Gee
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 39)

Abstract

Laser excited fluorescence spectroscopy was used to determine that CF2 radicals control the silicon dioxide to silicon etch ratio in fluorocarbon discharges used to etch silicon and silicon dioxide. CF2 was found to control the etch ratio through polymer formation which selectively inhibits the silicon etch rate.

Keywords

Dioxide Fluorocarbon 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • P. J. HargisJr.
    • 1
  • R. W. Light
    • 1
  • J. M. Gee
    • 1
  1. 1.Sandia National LaboratoriesAlbuquerqueUSA

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