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Laser Diagnostic Studies of Plasma Etching and Deposition

  • P. J. HargisJr.
  • R. W. Light
  • J. M. Gee
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 39)

Abstract

Laser excited fluorescence spectroscopy was used to determine that CF2 radicals control the silicon dioxide to silicon etch ratio in fluorocarbon discharges used to etch silicon and silicon dioxide. CF2 was found to control the etch ratio through polymer formation which selectively inhibits the silicon etch rate.

Keywords

Etch Rate Polymer Formation Plasma Etching Sandia National Laboratory Silicon Etch 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • P. J. HargisJr.
    • 1
  • R. W. Light
    • 1
  • J. M. Gee
    • 1
  1. 1.Sandia National LaboratoriesAlbuquerqueUSA

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