Optical Characterization of Implantation Damage Recovery and Electrical Activation in GaAs by Raman Scattering
Ion implantation is known to be an attractive method for selectively doping semiconductors, which however has the inherent drawback to require a post implantation treatment in order to anneal the associated lattice damage and to activate the implants by inserting them on the proper lattice sites.
KeywordsImplantation Damage Damage Recovery Wave Vector Reduction Charge Density Oscillation Room Temperature Implantation
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