Optical Characterization of Implantation Damage Recovery and Electrical Activation in GaAs by Raman Scattering

  • B. Prevot
  • C. Schwab
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 39)

Abstract

Ion implantation is known to be an attractive method for selectively doping semiconductors, which however has the inherent drawback to require a post implantation treatment in order to anneal the associated lattice damage and to activate the implants by inserting them on the proper lattice sites.

Keywords

GaAs 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • B. Prevot
    • 1
  • C. Schwab
    • 1
  1. 1.Laboratoire de Spectroscopie et d’Optique du Corps Solide, Unité Associée au CNRS n° 232Université Louis PasteurStrasbourgFrance

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