Laser Diagnostics of Submicron VLSI-Structures
In spite of the dramatic changes in feature size, die size and defect density, wafer inspection continues to be done manually. However, fast automatic wafer inspection will be a key element for efficient submicron VLSI-process technologies. A new two-step laser scanning procedure is described, resulting in processing speeds of up to 40 million pixels per second and spatial resolution down to 0.1 μm.
Unable to display preview. Download preview PDF.
- Merkle, F., Freischlad, K., Bille, J., Proc. ESO Conference “Scientific Importance of High Angular Resolution at Infrared and Optical Wavelengths”, Garching, March 1981, p. 41 - 52Google Scholar
- J. Bille, G. Jahn, A. Dreher Proceedings of the SPIE, Vol. 498 (SPIE’s 28th Annual International Technical Symposium, 19–24 August 1984, San Diego, California )Google Scholar
- J. Bille, G. Jahn, M. Frieben, Proceedings of the SPIE, Vol. 332, 269–275 (1982)Google Scholar
- G. Zinser, D. Komitowski, J. Bille Proceedings of the VIth International Congress for Pattern Recognition ( ICPR ), München (1982), p. 1173–1175Google Scholar