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Laser Diagnostics of Submicron VLSI-Structures

  • Conference paper
Laser Processing and Diagnostics

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 39))

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Abstract

In spite of the dramatic changes in feature size, die size and defect density, wafer inspection continues to be done manually. However, fast automatic wafer inspection will be a key element for efficient submicron VLSI-process technologies. A new two-step laser scanning procedure is described, resulting in processing speeds of up to 40 million pixels per second and spatial resolution down to 0.1 μm.

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References

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© 1984 Springer-Verlag Berlin Heidelberg

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Bille, J., Karte, T., Frieben, M., Plesch, A., Wijnaendts, R.W., Kaplan, R. (1984). Laser Diagnostics of Submicron VLSI-Structures. In: Bäuerle, D. (eds) Laser Processing and Diagnostics. Springer Series in Chemical Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82381-7_58

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  • DOI: https://doi.org/10.1007/978-3-642-82381-7_58

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82383-1

  • Online ISBN: 978-3-642-82381-7

  • eBook Packages: Springer Book Archive

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