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Laser-Induced Oxidation of Silicon Surfaces

  • T. Tokuyama
  • S. Kimura
  • T. Warabisako
  • E. Murakami
  • K. Miyake
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 39)

Abstract

The difference between reaction mechanisms in laser and plasma assisted silicon oxidation is discussed. Photonic rather than thermal aspects of laser irradiation are seen to be important when lasers are used as a means to lower oxidation temperature. Although laser photonic oxidation enhancement occurs with an increase in the supply of free Si atoms to the Si-Si02 interface, it is difficult to utilize this phenomenon in practical processes because the oxidation reaction is limited in the case of thick oxide structures by the supply of the oxidizing species rather than silicon atoms. Enhanced oxidation in the plasma ambient is caused by the existence of oxidizing species which are excited in the plasma though not involved in the thermal oxidation ambient.

Keywords

Laser Irradiation Thermal Oxidation Silicon Surface Oxygen Plasma Si02 Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • T. Tokuyama
    • 1
  • S. Kimura
    • 1
  • T. Warabisako
    • 1
  • E. Murakami
    • 1
  • K. Miyake
    • 1
  1. 1.Central Research LaboratoryHitachi Ltd.Kokubunji-shi, Tokyo 185Japan

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