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Low Temperature Growth of HgTe by a UV Photosensitisation Method

  • S. J. C. Irvine
  • J. B. Mullin
  • J. Tunnicliffe
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 39)

Abstract

The binary semi-metal HgTe is an end member of the important infrared detector alloy CdxHg1-xTe. As the requirement for low temperature epitaxial growth of this alloy is due to the instability of Hg in the lattice, the compound, HgTe, is an important material to investigate with new, low temperature growth techniques. Previous publications have considered the limitation on low temperature growth of CdxHg1-xTe by Metal-Organic Vapour Phase Epitaxy (MOVPE) to be related to the thermal stability of the Te metal-organic; the preferred source being diethyltelluride (Et2Te) [1–5]. Significant growth rates are not achieved by pyrolysis below 400°C but control during growth of the electrically active Hg vacancy requires growth temperatures below 300°C. A further attraction of low temperature growth is the potential ability to grow abrupt HgTe/CdTe interfaces and hence superlattice structures [6].

Keywords

Epitaxial Layer Full Width Half Maximum Rutherford Back Scattering Surface Kinetic Pyramid Feature 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • S. J. C. Irvine
    • 1
  • J. B. Mullin
    • 1
  • J. Tunnicliffe
    • 1
  1. 1.Royal Signals and Radar EstablishmentGreat Malvern, WorcestershireUK

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