Low Temperature Growth of HgTe by a UV Photosensitisation Method
The binary semi-metal HgTe is an end member of the important infrared detector alloy CdxHg1-xTe. As the requirement for low temperature epitaxial growth of this alloy is due to the instability of Hg in the lattice, the compound, HgTe, is an important material to investigate with new, low temperature growth techniques. Previous publications have considered the limitation on low temperature growth of CdxHg1-xTe by Metal-Organic Vapour Phase Epitaxy (MOVPE) to be related to the thermal stability of the Te metal-organic; the preferred source being diethyltelluride (Et2Te) [1–5]. Significant growth rates are not achieved by pyrolysis below 400°C but control during growth of the electrically active Hg vacancy requires growth temperatures below 300°C. A further attraction of low temperature growth is the potential ability to grow abrupt HgTe/CdTe interfaces and hence superlattice structures .
KeywordsEpitaxial Layer Full Width Half Maximum Rutherford Back Scattering Surface Kinetic Pyramid Feature
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- 5.I. Bhat and S.K. Ghandhi: J. Electrochem. Soc., in press.Google Scholar
- 7.S.J.C. Irvine, D.J. Robbins, J.B. Mullin and J.L. Glasper: Proc. MRS Symp. Laser-Controlled Chemical Processing of Surfaces, Elsevier, 1984.Google Scholar
- 8.S.J.C. Irvine, J.B. Mullin and J. Tunnicliffe: J. Crystal Growth proceedings ICMOVPE II in press.Google Scholar
- 10.J.A. Grimshaw: to be published.Google Scholar