Abstract
Plasma reactive etching and chemical vapor deposition (CVD) are widely used techniques in the fabrication of semiconductor microelectronic devices. Both processes are complex and difficult to characterize because of the large number of reactive components which may be present; in addition, the field gradients present in plasmas and the temperature gradients present in CVD reactors must be considered in any general model of these processes. The use of optical probes for plasma [1,2] and CVD [1,3] processes has begun to provide important information on the elementary reactions taking place in these systems. The high sensitivity and time and energy resolution afforded by laser spectroscopic techniques, in particular, have been extremely valuable for this purpose.
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References
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Joyce, S.A., Roop, B., Schultz, J.C., Suzuki, K., Thoman, J., Steinfeld, J.I. (1984). Characterization of Reactive Intermediates in Silicon Etching and Deposition Using Laser Techniques. In: Bäuerle, D. (eds) Laser Processing and Diagnostics. Springer Series in Chemical Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82381-7_29
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DOI: https://doi.org/10.1007/978-3-642-82381-7_29
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