Deposition of Silicon Films by Photodissociation of Silane Under IR Laser Irradiation

  • Y. Pauleau
  • D. Tonneau
  • G. Auvert
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 39)

Abstract

In the field of semiconductor processing, a considerable amount of interest has been devoted to laser-induced deposition of silicon films [1]. For example, hydrogenated amorphous silicon (a-Si) films can be successfully deposited on quartz or glass substrates at temperatures below 400 °C [2–4]. The technique involves vibrational excitation of silane molecules by absorption of the P(20) CO2 laser line at 10.59 μm. Since the absorption of SiH4 molecules is known to be enhanced by buffer gases such as hydrogen and nitrogen, the deposition rate of a-Si films formed by irradiating SiH4-N2 mixtures is likely to be altered.

Keywords

Quartz Silane Deposi Tion Pyrolysis Photodissociation 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Y. Pauleau
    • 1
  • D. Tonneau
    • 1
  • G. Auvert
    • 1
  1. 1.Centre National d’Etudes des TélécommunicationsMeylan CedexFrance

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