Deposition of Silicon Films by Photodissociation of Silane Under IR Laser Irradiation
In the field of semiconductor processing, a considerable amount of interest has been devoted to laser-induced deposition of silicon films . For example, hydrogenated amorphous silicon (a-Si) films can be successfully deposited on quartz or glass substrates at temperatures below 400 °C [2–4]. The technique involves vibrational excitation of silane molecules by absorption of the P(20) CO2 laser line at 10.59 μm. Since the absorption of SiH4 molecules is known to be enhanced by buffer gases such as hydrogen and nitrogen, the deposition rate of a-Si films formed by irradiating SiH4-N2 mixtures is likely to be altered.
KeywordsDeposition Rate Laser Fluence Nitrogen Pressure Silicon Film Nitrogen Molecule
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- 4.Y. Pauleau, R. Stawski, P. Lami, G. Auvert, in “Laser-Controlled Chemical Processing of Surfaces”, Mat. Res. Soc. Symp. Proc., Vol. 29, ed. by A. Wayne Johnson and D. 3. Ehrlich, (North-Holland, New York, 1984) (to be published)Google Scholar
- 5.R. Bilenchi, M. Musci, in “Proceedings of the 8th International Conference on Chemical Vapor Deposition”, ed. by J. M. Blocher, G. A. Vuillard and G. Wahl, (The Electrochemical Society Softbound Proceeding Series, Pennington, 1981) p. 275Google Scholar
- 7.M. Meunier, J. H. Flint, D. Adler, J. S. Haggerty, in “Laser-Controlled Chemical Processing of Surfaces”, Mat. Res. Soc. Symp. Proc., Vol. 29, ed. by A. Wayne Oohnson and D. J. Ehrlich, (North Holland, New York, 1984) (to be published)Google Scholar