Abstract
Synthesis of dielectric silicon films by means of chemical vapour deposition has recently come into wide practice. These methods are usually based on the interaction of silane with ammonia, oxygen or N2O [1–3]. Also chlorosilanes are often used for this purpose [1, 4]. Studies show that the reactions under discussion involve many routes and stages. To optimize the process and to obtain films of the needed chemical composition require the identification of properties of individual stages, particularly for gas-phase stages.
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References
Silicon Nitride in Electronics, ed. by A.V. Rzhanov (Izd. Nauka, Novosibirsk 1982)
L.L. Vasilyeva, V.N. Drozdov: In Problems of Physical Chemistry of Semiconductor Surfaces, ed. by A.V. Rzhanov (Izd. Nauka, Novosibirsk 1978) p. 155
L.L. Vasilyeva, L.I. Rabinovich: Izv. SO AN SSSR, Ser.Khim. 4, No. 9, 65 (1981)
O.I. Semyonova, L.A. Nenasheva, S.M. Repinskii: Izv.AN SSSR, Neorgan.Materialy 17, No. 7, 1223 (1981)
W.M. Shaub, S.H. Bauer: Int.J.Chem.Kinet. 7, No. 4, 509 (1975)
Yu.N. Samsonov, A.K. Petrov, Yu.N. Molin: Kinetika i Kataliz 20, 17 (1979)
M. Bowrey, J.H. Purnell: Proc.Roy.Soc., Ser. A 321, 341 (1971)
V.I. Vedeneyev, A.A. Kibalko: Rate Constants of Gas-Phase Monomolecular Reactions (Izd. Nauka, Moscow 1972; p. 100
J.H. Purnell, R. Walsh: Proc.Roy.Soc., Ser. A 293, 543 (1966)
G. Cochet, H. Mellotee, R. Delbourgo: J.Chem.Phys. 71, No. 10, 1363 (1974)
C.G. Newman, H.E. O’Neal, M.A. Ring, F. Leska, N. Shipley: Int. J.Chem.Kinet. 11, No. 11, 1167 (1979)
P. Neudorfl, A. Jodhan, O.P. Strausz: J.Phys.Chem. 84, No. 3, 338 (1980)
V.N. Panfilov: Tharmal Decomposition and Other Reactions of Monosilane in Gas Phase (Preprint of Institute of Chemical Kinetics and Combustion, Sib.Branch, USSR Ac. of Sci., Novosibirsk 1981)
M.S. Sukhov: Physical Chemistry of Monocrystalline Semiconductor Surfaces, IV Seminar, Abstracts (Novosibirsk 1981) p. 33
N.M. Emmanuel, D.G. Knorre: Course of Chemical Kinetics (Izd. Vysshaya Shkola, Moscow 1969) p. 288
Lin Sin Shong: J.Electroch.Soc. 125, No. 11, 1877 (1978)
L.L. Vasilyeva, A.S. Ginovker, V.P. Popov, S.M. Repinskii: Izv. SO AN SSSR, Ser.Khim.Nauk 5, 54 (1979)
D. Bauerle, P. Irsigler, G. Leyendecker. H. Noll, D. Wagner: Appl.Phys.Letts. 40, No. 9, 819
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© 1984 Springer-Verlag Berlin Heidelberg
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Nosov, V.V., Repinskii, S.M., Dulcev, F.N. (1984). IR Laser Pyrolysis of Silane. In: Bäuerle, D. (eds) Laser Processing and Diagnostics. Springer Series in Chemical Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82381-7_26
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DOI: https://doi.org/10.1007/978-3-642-82381-7_26
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