Laser Deposition of Single Crystalline GaAs and Stimulated Sheet Doping

Abstract

The growing application of laser light in processing depends on several reasons. Firstly the possibility to achieve light spots down to 1 μm diameter combined with extreme high power density offers applications in mechanical engineering. Secondly the quantum energy of the light quanta emitted can be used to energize chemical reactions in a specific way leading to photolytic interactions. Thirdly the possibility to create extremely short laser pulses permits correspondingly short heating cycles in small volumes where the absorption takes place. This allows cracking thermally adsorbed species as well as diffusion into the bulk material. The first of these effects can be used as the initiator of crystal growth, the second allows to distribute dopants over a very short distance. Both effects are of high practical importance for modern semiconductor device fabrication.