Advertisement

Inhomogeneous Energy Deposition in Crystalline Silicon with Picosecond Pulses of One Micron Radiation

  • Ian W. Boyd
  • Steven C. Moss
  • Thomas F. Boggess
  • Arthur L. Smirl
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 39)

Abstract

In recent years, the extensive use of ultrashort laser pulses to time resolve the transmission and reflectivity of Si has led to a much improved understanding of the kinetics of energy deposition and redistribution immediately preceding and following optically induced phase transitions [1]. With few exceptions, visible sources of radiation with photon energies well above the indirect bandgap have been used for excitation in these studies. By contrast, because the interaction of near-bandgap picosecond 1 μm radiation with Si is more complicated, it has received little attention. We have recently presented preliminary results of the first studies of the pulsewidth dependence of the nonlinear absorption [2] and the various phase transitions and changes in surface morphology [3] for 1 μm excitation pulses in the 4–260 ps range. These measurements demonstrates that the absorption of 1 μm picosecond radiation below the melting point is strictly fluence dependent, with no observable intensity-dependent contributions. Moreover, the nonlinear behavior of the absorption in this regime can be completely accounted for by indirect and free-carrier absorption, when lattice-heating effects are included. In addition, the fluence required for single-shot melting of the Si at 1 μm is found to decrease significant with decreasing pulsewidth.

Keywords

Ultrashort Laser Pulse Picosecond Pulse Induce Phase Transition Melting Threshold Ripple Pattern 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    H. Kurz, in “Festkoerperprobleme XXIII”, 1983, p. 115.Google Scholar
  2. 2.
    A. L. Smirl, T. F. Boggess, I. W. Boyd, S. C. Moss, 17th International Conference on the Physics of Semiconductors, San Francisco, California, 6–10 August 1984 (to be published).Google Scholar
  3. 3.
    I. W. Boyd, S. C. Moss, T. F. Boggess, A. L. Smirl, Appi. Phys. Lett., (1984).Google Scholar
  4. 4.
    P. L. Liu, R. Yen, N. Bloembergen R. T. Hodgson, in “Laser and Electron Beam Processing of Materials,” edited by C. W. White and P. S. Peercy (Academic, New York, 1980).Google Scholar
  5. 5.
    J. M. Liu, Rev. Sci. Inst., Optics Letters, 7, 196 (1982).Google Scholar
  6. 6.
    M. Birnbaum, J. Appl. Phys. 36, 3688 (1965).CrossRefGoogle Scholar
  7. 7.
    D. C. Emmony, R. P. Howson, K. J. Willis, Appl. Phys. Lett., 23, 598 (1977).CrossRefGoogle Scholar
  8. 8.
    N. R. Isenor, Appl. Phys. Lett., 31, 148 (1977).CrossRefGoogle Scholar
  9. 9.
    P. A. Temple, M. J. Soileau, IEEE J. Quantum Electron., 17, 2067 (1981).CrossRefGoogle Scholar
  10. 10.
    S. R. J. Brueck, D. J. Ehrlich, Phys. Rev. Lett., 48, 1678 (1982).CrossRefGoogle Scholar
  11. 11.
    H. M. van Driel, J. E. Sipe, J. F. Young, Phys. Rev. Lett., 49, 1955 (1982).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Ian W. Boyd
    • 1
  • Steven C. Moss
    • 1
  • Thomas F. Boggess
    • 1
  • Arthur L. Smirl
    • 1
  1. 1.Center for Applied Quantum Electronics, Department of PhysicsNorth Texas State UniversityDentonUSA

Personalised recommendations