Abstract
Laser-induced surface damage observed during illumination of semiconductors by intense laser pulses has been much studied. The nature of damage has been established [1,2] by studying the nucleation and growth of damage near threshold intensities. The heterogeneous nucleation of damage in the early stage was also revealed. Furthermore, charge emission from a silicon surface induced by picosecond laser pulses at 532 nm was presented [3,4]. But the energy transfer mechanisms from the radiation field to the semiconductor in the multiple-pulse damage regime are not well understood. To contribute to further understanding of damage mechanisms induced by picosecond Nd:YAG laser pulses at 1.06 μm, damage at laser intensities below the one-shot damage threshold has been investigated. By recording charged particle emission which accompanies damage processes, some interesting information has been revealed. With a small capacitor and/or an electron multiplier tube, one can detect the charge emitted during small pit formation which may be considered as the initial damage morpnology.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
R.M. Walser, M.F. Becker, D.Y. Sheng, and J.G. Ambrose, “Heterogeneous Nucleation of Spatially Coherent Damage Structures in Crystalline Silicon With Picosecond 1.06 pm and 0.533 pm Laser Pulse” in Laser and Electron-Beam Solid Interactions and Materials Processing., T.J. Gibbons, W. Hess, and T. Sigmon, eds., New York, Elsevier, 1981, 177.
M.F. Becker, R.M. Walser, Y.K. Jhee, and D.Y. Sheng, “Picosecond Laser Damage Mechanism at Semiconductor Surfaces” in Picosecond Lasers and Applications, January 1982, Los Angeles, CA, SPIE Vol. 322, 93.
J.M. Liu, R. Yen, H. Kurz, and N. Bloemergen, Appl. Phys. Lett. 39, 755 (1981).
J.A. van Vechten, J. Appl. Phys. 53, 9202 (1982).
M.F. Becker, Y.K. Jhee, M. Bordelon, and R.M. Walser, “Observations of an Incubation Period for Multiple-Pulse Laser-Induced Damage” in proceedings of Conference on Lasers and Electro-Optics, May 1983, Baltimore, MD, 72.
G.P. Gusev, T.I. Musienko, G.T. Petrovsskii, L.R. Savanovich, and A.V. Shatilov, Sov. J. Opt. Technol. 48, 480 (1981).
M.F. Becker, Y.K. Jhee, M. Bordelon, and R.M. Walser, “Charged Particle Exoemission from Silicon during Multiple-Pulse Laser Induced Damage” in proceedings of the 14th Symposium on Optical Materials for High Power Lasers, NBS Soecial Publication #669, Boulder, CO, 1984.
M. Bordelon, R.M. Walser, M.F. Becker, and Y.K. Jhee, “A Study of the PRF Dependence of the Accumulation Effect in Multiple Pulse Laser Damage of Silicon” in proceedings of the 14th Symposium on Optical Materials for High Power Lasers, NBS Special Publication #699, Boulder, CO, 1984.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1984 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Jhee, Y.K., Becker, M.F., Walser, R.M. (1984). Subthreshold Picosecond Laser Damage in Silicon Associated with Charge Emission. In: Auston, D.H., Eisenthal, K.B. (eds) Ultrafast Phenomena IV. Springer Series in Chemical Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82378-7_51
Download citation
DOI: https://doi.org/10.1007/978-3-642-82378-7_51
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-82380-0
Online ISBN: 978-3-642-82378-7
eBook Packages: Springer Book Archive