Abstract
The photoluminescence decay of an excited semiconductor depends on a number of factors: 1. The penetration depth of the exciting light. 2. Diffusion of photogenerated electron-hole (e-h) pairs into the semiconductor bulk. 3. Kinetics of band-to-band radiative recombination and nonradiative recombination of e-h pairs at bulk or surface centers. 4. Photoluminescence re-absorption.
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References
J. Vatikus, Phys. Stat. Sol. A34, 769 (1976).
D. Huppert and E. Kolodney, CFfiem. Phys. 63, 401 (1981).
D. Huppert, Z. Harzion, N. Croitoru and S. Gottesfeld in K.B. Eisenthal, R.M. Hochstrasser, W. Kaiser and A. Laubereau (Eds.) Picosecond Phenomena III, p. 360, Springer-Verlag, 1982.
a) G. Hodes, J. Manassen and D. Cahen, Nature, 261, 403 (1976).
b) B. Miller and A. Heller, Nature 262, 680 (1976).
c) A.B. Ellis, S.W. Kaiser and M.S. Wrighton, J. Am. Chem. Soc. 98, 1635, (1976).
R.H. Wilson in “Photoeffects at Semiconductors-Electrolyte Interfaces”, A.J. Nozik (Ed.), Washington, D.C.: ACS (1981), p. 103.
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Huppert, D., Gottesfeld, S., Harzion, Z., Evenor, M., Feldberg, S. (1984). Determination of Surface Recombination Velocities for CdS Crystals Immersed in Electrolyte Solutions by a Picosecond Photoluminescence Technique. In: Auston, D.H., Eisenthal, K.B. (eds) Ultrafast Phenomena IV. Springer Series in Chemical Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82378-7_49
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DOI: https://doi.org/10.1007/978-3-642-82378-7_49
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