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Picosecond Measurement of Hot Carrier Luminescence in In0.53Ga0.47As

  • K. Kash
  • J. Shah
Conference paper
  • 124 Downloads
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 38)

Abstract

Time resolved optical measurements provide considerable information about carrier energy loss processes in semiconductors by measuring the time evolution of the carrier distribution function. Picosecond luminescence spectra using a streak camera or a Kerr shutter [1–3] and subpicosecond excite and probe absorption experiments [4,5] have been reported in GaAs. A comparable study in the smaller bandgap ternary and quaternary semiconductors would be of considerable interest from both the physics and the device viewpoint, but has not yet been reported.

Keywords

Pulse Train Streak Camera Energy Loss Rate High Energy Tail Carrier Temperature 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • K. Kash
    • 1
  • J. Shah
    • 1
  1. 1.AT & T Bell LaboratoriesHolmdelUSA

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