Picosecond Measurement of Hot Carrier Luminescence in In0.53Ga0.47As
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Time resolved optical measurements provide considerable information about carrier energy loss processes in semiconductors by measuring the time evolution of the carrier distribution function. Picosecond luminescence spectra using a streak camera or a Kerr shutter [1–3] and subpicosecond excite and probe absorption experiments [4,5] have been reported in GaAs. A comparable study in the smaller bandgap ternary and quaternary semiconductors would be of considerable interest from both the physics and the device viewpoint, but has not yet been reported.
KeywordsPulse Train Streak Camera Energy Loss Rate High Energy Tail Carrier Temperature
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- W. Graudzus and E. O. Goebel, Proceedings of the 16th International Conference on the Physics of Semiconductors I, 555 (Montpelier, 1982 ).Google Scholar
- 9.Jagdeep Shah, J. Phys. C7, 445 (1981).Google Scholar
- 10.E. M. Conwell, High Field Transport in Semiconductors ( Academic Press, New York, 1967 ).Google Scholar