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Dynamics of Dense Electron-Hole Plasma and Heating of Silicon Lattice Under Picosecond Laser Irradiation

  • L. A. Lompré
  • J. M. Liu
  • H. Kurz
  • N. Bloembergen
Conference paper
  • 131 Downloads
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 38)

Abstract

Numerous investigations of the mechanisms for pulsed laser-induced phase transition provide ample evidence that the surface of metals and semiconductors undergoes a solid-liquid phase change as soon as a critical laser fluence is exceeded. There is no doubt about the thermal nature of the phase transition as long as nanosecond pulses are being used [1]. It is the main purpose of this contribution to clarify whether under picosecond irradiation the simple thermal melting approach is still valid. This question is focused on the time required to establish thermal equilibrium between carriers and phonons [2].

Keywords

Laser Fluence Silicon Film Auger Recombination Free Carrier Absorption Fluence Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • L. A. Lompré
    • 1
    • 2
  • J. M. Liu
    • 2
  • H. Kurz
    • 2
  • N. Bloembergen
    • 2
  1. 1.C.E.N./Saclay, DPh.G/S.P.AGif-sur-Yvette CedexFrance
  2. 2.Division of Applied SciencesHarvard UniversityCambridgeUSA

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