Dynamics of Dense Electron-Hole Plasma and Heating of Silicon Lattice Under Picosecond Laser Irradiation
- 131 Downloads
Numerous investigations of the mechanisms for pulsed laser-induced phase transition provide ample evidence that the surface of metals and semiconductors undergoes a solid-liquid phase change as soon as a critical laser fluence is exceeded. There is no doubt about the thermal nature of the phase transition as long as nanosecond pulses are being used . It is the main purpose of this contribution to clarify whether under picosecond irradiation the simple thermal melting approach is still valid. This question is focused on the time required to establish thermal equilibrium between carriers and phonons .
KeywordsLaser Fluence Silicon Film Auger Recombination Free Carrier Absorption Fluence Level
Unable to display preview. Download preview PDF.
- 9.L.A. Lompré, J.M. Liu, H. Kurz: Proc. Mat. Res. Soc. Symposium, Boston 1983Google Scholar