Picosecond Optical Measurements of Circuit Effects on Carrier Sweepout in GaAs Schottky Diodes
Optical measurements of semiconductor devices can provide direct information about carrier sweepout under high field conditions [1–3]. In previous work, we exploited the nonlinearity in the luminescence in GaAs  to do picosecond time-resolved experiments on a GaAs photoconductor . The device consisted of an n-type active layer between ohmic contacts. The speed of the device, and the characteristic time of the luminescence decay is determined by the hole transit time in the device. From the luminescence decay we were able to extract a hole velocity of 2×106cm/s at a field of 20kV/cm. We have used the same technique to measure carrier sweepout in a GaAs Schottky diode incorporated into a large capacitor at room temperature. Ohmic and blocking (i.e. Schottky) contacts can be helpful in discriminating between electron and hole transport processes. At a bias voltage of −4V, we have observed pulsewidth limited luminescence decays.
Unable to display preview. Download preview PDF.
- 1.B. B. Levine, C. G. Bethea, W. T. Tsang, F. Capasso K. K. Thornber, R.C. Fulton and D. A. Kleinman Appl. Phys. Lett. 42 104 (1983)Google Scholar
- 2.C. V. Shank, R. L. Fork, B. I. Greene, F. K. Reinhart and R. A. Logan Appl. Phys. Lett. 38 104 (1981)Google Scholar
- 3.A. Von Lehmen and J. M. Ballantyne Appl. Phys. Lett. 44 87 (1984)Google Scholar
- 4.D. von der Linde, J. Kuhl and E. Rosengart J. Luminescence 24/25 675 (1981)Google Scholar