Infrared Spectroscopy of Electronic Excitations in MOS Structures

  • Jörg P. Kotthaus
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)


In metal-oxide-semiconductor capacitors voltage-tunable quasi-two-dimen­sional electron systems can be realized by a gate voltage induced band bending at the semiconductor-oxide interface. Here recent experimental results serve to illustrate how infrared spectroscopy of electronic excitations can be used to obtain important information on the elec­tronic properties of such two-dimensional electron systems.


Gate Voltage High Magnetic Field Cyclotron Motion Optical Mass Valley Degeneracy 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Jörg P. Kotthaus
    • 1
  1. 1.Institut für Angewandte Physik der Universität HamburgHamburg 36Fed. Rep. of Germany

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