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Infrared Spectroscopy of Electronic Excitations in MOS Structures

  • Jörg P. Kotthaus
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)

Abstract

In metal-oxide-semiconductor capacitors voltage-tunable quasi-two-dimen­sional electron systems can be realized by a gate voltage induced band bending at the semiconductor-oxide interface. Here recent experimental results serve to illustrate how infrared spectroscopy of electronic excitations can be used to obtain important information on the elec­tronic properties of such two-dimensional electron systems.

Keywords

Gate Voltage High Magnetic Field Cyclotron Motion Optical Mass Valley Degeneracy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Jörg P. Kotthaus
    • 1
  1. 1.Institut für Angewandte Physik der Universität HamburgHamburg 36Fed. Rep. of Germany

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