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The Quantum Hall Effect

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Book cover Two-Dimensional Systems, Heterostructures, and Superlattices

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 53))

Abstract

Usually the Hall effect is used to measure the concentration of free electrons in semiconductors. The classical expression for the Hall resistivity pxy of a two-dimensional electron system is:

$$ {p_{XY}} = \frac{B}{{{N_s}e}} $$
(1)

The direction of the magnetic field B is perpendicular to the x-y plane of the electron gas with the two-dimensional carrier density Ns. The notation two-dimensional electron gas (2DEG) means that the energy spectrum of the electron is exclusively determined by the motion within the x-y plane. Such a 2DEG or at least an energy spectrum with well-separated energy levels for the electron motion perpendicular to the x-y plane is essential for the observation of the quantum Hall effect. Silicon MOSFETs and GaAs/AlxGa1-xAs heterostructures are typical devices used for studies of the electronic properties of a 2DEG /1/.

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Author information

Authors and Affiliations

  1. Physik-Department, Technische Universität München, D-8046, Garching, Fed. Rep. of Germany

    K. v. Klitzing & G. Ebert

Authors
  1. K. v. Klitzing
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  2. G. Ebert
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Editor information

Editors and Affiliations

  1. Institut für Physik, Montanuniversität Leoben, Franz-Josef-Straße 18, A-8700, Leoben, Austria

    Günther Bauer

  2. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

  3. Ludwig Boltzmann Institut für Festkörperphysik, A-1060, Wien, Austria

    Friedemar Kuchar

  4. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

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© 1984 Springer-Verlag Berlin Heidelberg

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v. Klitzing, K., Ebert, G. (1984). The Quantum Hall Effect. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems, Heterostructures, and Superlattices. Springer Series in Solid-State Sciences, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82311-4_25

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  • DOI: https://doi.org/10.1007/978-3-642-82311-4_25

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82313-8

  • Online ISBN: 978-3-642-82311-4

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