Preparation and Characterization of GaAs Doping Superlattices

  • Klaus Ploog
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)


The space-charge induced periodic modulation of the energy bands in GaAs doping superlattices grown by molecular beam epitaxy leads to a confinement of electrons and holes in alternate layers (indirect gap in real space). Due to the effective spatial separation the recombination lifetimes of excess carriers are enhanced and large deviations of electron and hole concentrations from thermal equilibrium become quasi-stable. As a result, doping superlattices exhibit unique tunable electronic properties. This fundamental difference from familiar semiconductors is exemplified by results on the tunability of bipolar conductivity and of the two-dimensional subband structure by carrier injection via selective electrodes and by photoexcitation.


Doping Concentration Carrier Injection Excess Carrier Recombination Lifetime Subband Energy 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Klaus Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungFed. Rep. of Germany

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