Strained Layer IV-VI Semiconductor Superlattices

  • E. J. Fantner
  • G. Bauer
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)


The strain in IV-VI semiconductor superlattices (SL) introduces qualitatively new features, originating from the many-valley band structure, not found in III-V SL systems. For the PbTe/PbSnTe system the misfit and substrate induced strain in the constituent layers is determined by X-ray diffractometry. The SL band structure, recently calculated by the envelope function approach is strongly modified by this strain. By varying the thickness ratio of the constituents and thus the strain, the electronic properties can be influenced accordingly.


Misfit Strain Band Discontinuity Superlattice Period Valence Band Discontinuity Superlattice System 
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  1. 1.
    L. Esaki and R. Tsu: IBM J.Res.Dev. 14, 61 (1970)CrossRefGoogle Scholar
  2. 2.
    L. Esaki: in “Molecular Beam Epitaxy and Heterostructures” Proc.Int. NATO School Erice 1983 (North Holland, Amsterdam 1984 )Google Scholar
  3. 3.
    K. Ploog and G. H. Döhler: Advances in Physics 32, 286 (1983)CrossRefGoogle Scholar
  4. 4.
    A. Lopez-Otero: Thin Solid Films 49, 3 (1978)CrossRefGoogle Scholar
  5. 5.
    H. Holloway: in’Physics of Thin Films’ed. G. Haas and M.H. Francombe (Academic N.Y. 1980) Vol. 11, p. 106Google Scholar
  6. 6.
    H. Kinoshita and H. Fujiyasu: J.Appl.Phys. 51, 5845 (1980); 52, 2869 (1981)CrossRefGoogle Scholar
  7. 7.
    H. Clemens, E. J. and G. Bauer: Rev.Sci.Instr. 54, 685 (1983)CrossRefGoogle Scholar
  8. 8.
    D.L. Partin: J.Vac.Sci. Technology 21, 1 (1982)CrossRefGoogle Scholar
  9. 9.
    H. Kinoshita, S. Takaoka, K. Murase and H. Fujiyasu: Proc.2nd Symp. MBE Tokyo: MBE-CST-2 (1982) p.61; H. Fujiyasu et al: Surface Science, in printGoogle Scholar
  10. 10.
    K.E. Ambrosch, H. Clemens, E.J. Fantner, G. Bauer, M. Kriechbaum, P. Kocevar: Surface Science, in printGoogle Scholar
  11. 11.
    A. Lopez-Otero and D. L. Haas: Thin Solid Films 23, 1 (1974)CrossRefGoogle Scholar
  12. 12.
    A. Segmüller, P. Krishna and L. Esaki: J.Appl.Cryst. 10, 1 (1977)CrossRefGoogle Scholar
  13. 13.
    C.A.B. Ball and J.H. van der Merwe: in°Dislocations in Solids’, ed. F.R.N. Nabarro (North Holland Publ.Comp. Amsterdam 1983) Vol. 6, p. 121Google Scholar
  14. 14.
    B. Ortner: in “Eigenspannungen” ed. E. Macherauch and V. Hauk (Deutsche Gesellschaft für Metallkunde, Oberursel, 1983) Vol. II, p. 49Google Scholar
  15. 15.
    A.A. Chudinov: Sov.Phys.Solid State 4, 553 (1962)Google Scholar
  16. 16.
    B. Houston, R. E. Strakna and H.S. Belson: J.Appl.Phys. 39 3913 (1968)CrossRefGoogle Scholar
  17. 17.
    E.J. Fantner, H. Clemens and G. Bauer: Adv. in X-Ray Analysis Vol. 27, (1984) in printGoogle Scholar
  18. 18.
    R.F. Bis: J.Appl.Phys. 47, 736 (1976)CrossRefGoogle Scholar
  19. 19.
    P. Kocevar: to be publishedGoogle Scholar
  20. 20.
    M. Kriechbaum: to be publishedGoogle Scholar
  21. 21.
    G. Bastard: Phys.Rev. B25, 7594 (1982)Google Scholar
  22. 22.
    M. Altarelli: Lecture Notes in Physics 177, 174 (1983)CrossRefGoogle Scholar
  23. 23.
    L.G. Ferreira: Phys.Rev. 137, A1601 (1965)CrossRefGoogle Scholar
  24. 24.
    W.J. Bartels and W. Nijman: J.Cryst.Growth 44, 518 (1978)Google Scholar
  25. 25.
    S.T. Picraux, L.R. Dawson, G.C. Osbourn, R.M. Biefeld, W.K. Chu: Appl.Phys.Lett. 43, 1020 (1983)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • E. J. Fantner
    • 1
  • G. Bauer
    • 1
  1. 1.Institut für PhysikMontanuniversität LeobenLeobenAustria

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