Strained Layer IV-VI Semiconductor Superlattices

  • E. J. Fantner
  • G. Bauer
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)

Abstract

The strain in IV-VI semiconductor superlattices (SL) introduces qualitatively new features, originating from the many-valley band structure, not found in III-V SL systems. For the PbTe/PbSnTe system the misfit and substrate induced strain in the constituent layers is determined by X-ray diffractometry. The SL band structure, recently calculated by the envelope function approach is strongly modified by this strain. By varying the thickness ratio of the constituents and thus the strain, the electronic properties can be influenced accordingly.

Keywords

Zinc Furnace Helium Propa Dition 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • E. J. Fantner
    • 1
  • G. Bauer
    • 1
  1. 1.Institut für PhysikMontanuniversität LeobenLeobenAustria

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