Combined Electric and Magnetic Field Effects in Semiconductor Heterostructures
The subband structure of electrons confined in a parabolic potential well, subjected to magnetic fields at arbitrary angles between the electric and magnetic field, is derived analytically. These theoretical results are used to analyze transport measurements on a thin layer of n-doped GaAs, confined between p layers under these conditions. Furthermore the results of numerical calculations of the Landau level structure in thin (periodicity < 120nm) GaAs-GaAlAs doping superlattices are presented for B parallel to the layers. These results show that cyclotron resonance can be observed as long the cyclotron energy is less than the subband width.
KeywordsAnisotropy Recombination GaAs Tate Haas
Unable to display preview. Download preview PDF.
- -1.F. Koch, in ‘Physics in High Magnetic Fields’,Solid State Sciences 24, ed. S. Chikazumi,N. Miura,Springer,Berlin,(1981)Google Scholar
- -5.J.C. Maan, in ‘Lecture Notes in Physics’ 177, ed. G. Landwehr, p 161, Springer Berlin, (1983)Google Scholar
- -7.J.H. Craseman, U. Merkt, J.P. Kotthaus, Solid State Commun, to be publishedGoogle Scholar
- -10.S.K. Bhattacharya, Phys.Rev.B 25, 3756, (1982)Google Scholar