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Combined Electric and Magnetic Field Effects in Semiconductor Heterostructures

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 53))

Abstract

The subband structure of electrons confined in a parabolic potential well, subjected to magnetic fields at arbitrary angles between the electric and magnetic field, is derived analytically. These theoretical results are used to analyze transport measurements on a thin layer of n-doped GaAs, confined between p layers under these conditions. Furthermore the results of numerical calculations of the Landau level structure in thin (periodicity < 120nm) GaAs-GaAlAs doping superlattices are presented for B parallel to the layers. These results show that cyclotron resonance can be observed as long the cyclotron energy is less than the subband width.

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© 1984 Springer-Verlag Berlin Heidelberg

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Maan, J.C. (1984). Combined Electric and Magnetic Field Effects in Semiconductor Heterostructures. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems, Heterostructures, and Superlattices. Springer Series in Solid-State Sciences, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82311-4_19

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  • DOI: https://doi.org/10.1007/978-3-642-82311-4_19

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82313-8

  • Online ISBN: 978-3-642-82311-4

  • eBook Packages: Springer Book Archive

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