Combined Electric and Magnetic Field Effects in Semiconductor Heterostructures

  • J. C. Maan
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)

Abstract

The subband structure of electrons confined in a parabolic potential well, subjected to magnetic fields at arbitrary angles between the electric and magnetic field, is derived analytically. These theoretical results are used to analyze transport measurements on a thin layer of n-doped GaAs, confined between p layers under these conditions. Furthermore the results of numerical calculations of the Landau level structure in thin (periodicity < 120nm) GaAs-GaAlAs doping superlattices are presented for B parallel to the layers. These results show that cyclotron resonance can be observed as long the cyclotron energy is less than the subband width.

Keywords

Anisotropy Recombination GaAs Tate Haas 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • J. C. Maan
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungHochfeld-MagnetlaborGrenoble CedexFrance

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