Abstract
In the past few years the Hot-Wall Epitaxy technique has rapidly become a recognized method to prepare thin films of IV–VI and II–VI compound semiconductors. The technique is capable of producing epitaxial films with controlled stoichiometry of simple binary compounds as well as of mixed crystals. It was established that the most important factors affecting the structure of the films were the nucleation and growth process of the first monolayers.
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© 1984 Springer-Verlag Berlin Heidelberg
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Sitter, H. (1984). Hot-Wall Epitaxy of IV–VI Compounds. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems, Heterostructures, and Superlattices. Springer Series in Solid-State Sciences, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82311-4_16
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DOI: https://doi.org/10.1007/978-3-642-82311-4_16
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