Abstract
The molecular beam epitaxy (MBE) and the closely related hot wall epitaxy (HWE) techniques are excellent tools to fabricate lead chalcogenide heterostructures for device applications. Whenever exact compositions of a ternary or quaternary film are required, like in lasers, the MBE method is best suited. Lattice-matched PbTe-based and non-lattice-matched PbSe-based laser structures have been realized for the 4 to 12 μm wavelength range. While no significant difference exists between lattice-matched and non-lattice-matched devices, both kinds exhibit much larger operation temperatures than diffused homojunction diodes. The properties of an MBE system specially designed for the growth of lead chalcogenides are described in detail. Characteristic data of PbTe- and PbSe-based DH lasers are presented and compared with those of homojunction devices.
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Bachem, KH., Norton, P., Preier, H. (1984). MBE-A Tool for Fabricating IV–VI Compound Diode Lasers. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems, Heterostructures, and Superlattices. Springer Series in Solid-State Sciences, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82311-4_15
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DOI: https://doi.org/10.1007/978-3-642-82311-4_15
Publisher Name: Springer, Berlin, Heidelberg
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