Advantages of Multiple Quantum Wells with Abrupt Interfaces for Light-Emitting Devices

  • D. Bimberg
  • J. Christen
  • A. Steckenborn
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)

Abstract

Continuous excitation, time resolved and time delayed cathodo- and photoluminescence experiments prove that radiative recombination from narrow GaAs (and In0.53 Ga0.47 As) quantum wells (QWs) is of excitonic character at temperatures up to room temperature. The radiative recombination rate is strongly enhanced as compared to 3-dimensional material of the same quality and carrier capture by impurities is suppressed. Charge transfer from narrow barriers to wells occurs quasiballistically. The wavelength of emission from QWs is tunable with decreasing well thickness up 1.4–1.5 of the bandgap of the 3D material. All these properties lead to a novel generation of light-emitting devices having properties superior to classical ones. Examples of such devices based on GaAs are given. The importance of interface quality is emphasized in connection with InP based structures, which show much less improvement.

Keywords

Phosphorus Recombination GaAs Prolate 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • D. Bimberg
    • 1
  • J. Christen
    • 1
  • A. Steckenborn
    • 2
  1. 1.Institut für Festkörperphysik ITechnische Universität BerlinBerlin 12Deutschland
  2. 2.Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbHBerlin 10Deutschland

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