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Two-Dimensional Systems, Heterostructures, and Superlattices pp 115–124Cite as

MOCVD Growth of GaAlAS/GaAs Heterostructures for Optoelectronic Devices

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 53))

Abstract

MOCVD offers an alternative growth technique for obtaining large abrupt multilayer III-V structures suitable for optoelectronic devices. GaAs/GaA1As heterojunction material has been grown to meet the requirement of a large range of optoelectronic devices including lasers, LEDs, FETs, waveguides and heterojunction bipolar transistors. Assessment techniques have been established and applied to heterojunction material. MOCVD material has been processed into discrete and monolithic optoelectronic devices and the device performance evaluated.

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Author information

Authors and Affiliations

  1. Allen Clark Research Centre, Plessey Research (Caswell) Limited, Caswell, Towceser, Northants, NN12 8EQ, UK

    M. Wynne Jones

Authors
  1. M. Wynne Jones
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Editor information

Editors and Affiliations

  1. Institut für Physik, Montanuniversität Leoben, Franz-Josef-Straße 18, A-8700, Leoben, Austria

    Günther Bauer

  2. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

  3. Ludwig Boltzmann Institut für Festkörperphysik, A-1060, Wien, Austria

    Friedemar Kuchar

  4. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

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© 1984 Springer-Verlag Berlin Heidelberg

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Jones, M.W. (1984). MOCVD Growth of GaAlAS/GaAs Heterostructures for Optoelectronic Devices. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems, Heterostructures, and Superlattices. Springer Series in Solid-State Sciences, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82311-4_12

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  • DOI: https://doi.org/10.1007/978-3-642-82311-4_12

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82313-8

  • Online ISBN: 978-3-642-82311-4

  • eBook Packages: Springer Book Archive

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