MOCVD Growth for Heterostructures and Two-Dimensional Electronic Systems

  • M. Razeghi
  • J. P. Duchemin
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)


The LPMOCVD technique has been successfuly used to grow heterojunctions and superlattices of GaxIn1−xAsyP1−y lattice-matched to InP for the complete compositional range between InP (λ = 0.91 μm, Eg = 1.35 eV) and the ternary compound Ga0.47In0.53As (λ= 1.67 μm, Eg = 0.75 eV). We have observed Shubnikov-de Haas oscillations in heterojunctions and superlattices of Ga0.47 In0.53 As-InP and Ga0.25In0.75As0.5 P0.5 - InP showing evidence of two-dimensional behaviour


Hall Resistance MOCVD Growth Bevel Angle Electron Carrier Concentration Quantum Size Effect 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    L. ESAKI and R. TSU I.B.M. - J. Res Develop. 14, 61, 1970.Google Scholar
  2. 2.
    M. RAZEGHI, M.A. POISSON, J.P. LARIVAIN, J.D. DUCHEMIN J. Electron. Mater., 12, pp. 371–395.CrossRefGoogle Scholar
  3. 3.
    M. RAZEGHI and J.P. DUCHEMIN J. of Crystal GROWTH Vol. 64, 1, (1983)CrossRefGoogle Scholar
  4. 4.
    M. RAZEGHI and J.P. DUCHEMIN J. Vac. Sci. et Technol. B., 1, 2, 262 (1983)CrossRefGoogle Scholar
  5. 5.
    M. RAZEGHI, M.A. POISSON, J.P. DUCHEMIN, B. de CREMOUX and M. VOOS. J. Appl. Phys. Lett. 43, 6, 586, (1983)CrossRefGoogle Scholar
  6. 7.
    M. RAZEGHI, J.C. PORTAL (unpublished)Google Scholar
  7. 8.
    M. RAZEGHI: Light wave technology for telecommunication (to be published)Google Scholar
  8. 9.
    J.P. DUCHEMIN, M. BONNET, G. BEUCHET and F. KOELSCH Inst. Phys. Conf. Ser. 45, Chapter 1, 10, (1979)Google Scholar
  9. 10.
    M. RAZEGHI, Revue THOMSON-CSF Vol. 15, 1. (1983)Google Scholar
  10. 11.
    M. RAZEGHI, Revue THOMSON-CSF Vol. 1, (1984)Google Scholar
  11. 12.
    M. RAZEGHI, K.H. GOTEZ, D. BIMBERG, A.V. SOLOMONOV and G.F. GLINSKI J. Appl. Phys. 54,(8), 4543 (1983)CrossRefGoogle Scholar
  12. 13.
    P. VOISIN, M. VOOS and M. RAZEGHI (unpublished)Google Scholar
  13. 14.
    Y.S. CHEN and O.K. KIM J. Appl. Phys. 52, 7892 (1981)Google Scholar
  14. 15.
    J.Y. MARZIN, J.L. BENCHINOL, B. SERMARGE, B. ETIENNE and M. VOOS Solid State Commun, (in Press.).Google Scholar
  15. 16.
    R.J. NICOLAS, S.I. SESSIONS and J.C. PORTAL Appl. Phys. Lett. 37, 178 (1980)Google Scholar
  16. 17.
    M. RAZEGHI, M.A. POISSON, Y. GULDNER, J.P. VIEREN, P. VOISIN and M. VOOS J. Appl. Phys. Lett. 40 10, 877 (1982)CrossRefGoogle Scholar
  17. 18.
    A’BRIGGS, Y. GOLDNER, J.P. VIEREN, M. VOOS, J.P. HIRTZ and M. RAZEGHI, Phys. Rev. B, 27, 10 (1983)Google Scholar
  18. 19.
    J.C. PORTAL, M.N. BRUMMELL, R.J. NICHOLAS, M. RAZEGHI ana A.Y. CHO. To be published (1983)Google Scholar
  19. 20.
    J.C. PORTAL, R.J. NICHOLAS and M. RAZEGHI J. Appl. Phys. Lett. Vol. 43, 3, 294, (1983)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • M. Razeghi
    • 1
  • J. P. Duchemin
    • 1
  1. 1.THOMSON-CSF-Laboratoire Central de RecherchesDomaine de CorbevilleOrsay CedexFrance

Personalised recommendations