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Depth Profiling of Evaporated Se-Te Films with SIMS

  • F. Soeda
  • K. Okuno
  • A. Ishitani
  • M. Nagano
  • T. Iijima
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 36)

Abstract

The Se-based photoconductor is widely used in photoconductive printing. Depth profiling of elements of major components and also low concentration dopants and impurities is desirable to understand the photoconductive behavior of the materials. However, until recently, use of SIMS on chalcogen photocon-ductors has been minimal because of the charging problem encountered in the measurement.

Keywords

Depth Profile Thick Film Crater Wall SeTe Alloy SeTe Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    M. Noda, L. Chow and K. C. Kao: J. Phys. D: Appl. Phys., 12, 1345 (1979)CrossRefGoogle Scholar
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    L. B. Schein: Phys. Rev. B, 10, No. 8, 3451 (1974)CrossRefGoogle Scholar
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    V. R. Deline, W. Katz, C. A.Evans, Jr. and P. Williams: Appl. Phys. Lett., 33(9), 832 (1978)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • F. Soeda
    • 1
  • K. Okuno
    • 1
  • A. Ishitani
    • 1
  • M. Nagano
    • 2
  • T. Iijima
    • 2
  1. 1.Toray Research Center, Inc.Sonoyama, Otsu, Shiga 520Japan
  2. 2.Fuji Electric Company LimitedTsukama, Matsumoto, Nagano 390Japan

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