Abstract
The Se-based photoconductor is widely used in photoconductive printing. Depth profiling of elements of major components and also low concentration dopants and impurities is desirable to understand the photoconductive behavior of the materials. However, until recently, use of SIMS on chalcogen photocon-ductors has been minimal because of the charging problem encountered in the measurement.
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References
M. Noda, L. Chow and K. C. Kao: J. Phys. D: Appl. Phys., 12, 1345 (1979)
L. B. Schein: Phys. Rev. B, 10, No. 8, 3451 (1974)
V. R. Deline, W. Katz, C. A.Evans, Jr. and P. Williams: Appl. Phys. Lett., 33(9), 832 (1978)
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© 1984 Springer-Verlag Berlin Heidelberg
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Soeda, F., Okuno, K., Ishitani, A., Nagano, M., Iijima, T. (1984). Depth Profiling of Evaporated Se-Te Films with SIMS. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_85
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DOI: https://doi.org/10.1007/978-3-642-82256-8_85
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