Abstract
Because of its good depth resolution and high sensitivity, SIMS is ideally suited for determining the depth distribution of sample constituents in the 0.1–10 μm depth range. The accuracy of measured depth distributions is generally limited by instrumental distortions [1]. A primary goal in SIMS instrument development, therefore, has been to eliminate such distortions by careful instrument design. The most recent advance in this direction is the Physical Electronics Model 6300 SIMS system. In this paper, the design and operation of this system is briefly described. An example of a depth profile of a B implant in Si is presented that demonstrates the performance of the instrument.
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References
C.W. Magee, R.E. Honig, and C.A. Evans, Jr., in Secondary Ion Mass Spectrometry SIMS III, ed. by A. Benninghoven, J. Giber, J. László, M. Riedel, and H.W. Werner (Springer, New York 1982), p. 172, and references therein.
B.F. Phillips and R.L. Gerlach, in Microbeam Analysis-1980, ed. by D.B. Wittry (San Francisco Press, San Francisco 1980), p. 85.
K. Wittmaack, Appl. Phys. Lett. 37, 285 (1980).
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© 1984 Springer-Verlag Berlin Heidelberg
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Welkie, D.G., Gerlach, R.L. (1984). High-Performance Depth Profiling with a Quadrupole-Based SIMS Instrument. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_84
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DOI: https://doi.org/10.1007/978-3-642-82256-8_84
Publisher Name: Springer, Berlin, Heidelberg
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