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Simulation of Ion Sputtering Process on the Binary Alloy

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Secondary Ion Mass Spectrometry SIMS IV

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 36))

Abstract

The composition of the alloy sputtered with low energy ions changes very much by the effect of the preferential sputtering, segregation of the constituent atoms to the surface and the ion-enhanced diffusion [1–7]. The simulation of the sputtering including the segregation and the ion enhanced diffusion with computer has advantage in order to understand the sputtering mechanism of the alloys.

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References

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Author information

Author notes

  1. R. S. Li

    Present address: The Institute of Metal Research, Shenyang, China

Authors and Affiliations

  1. Department of Applied Electronics, Osaka Electro-Communication University, 18-8, Hatsu-cho, Neyagawa, Osaka 572, Japan

    T. Koshikawa, T. Ikuta & R. S. Li

Authors
  1. T. Koshikawa
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  2. T. Ikuta
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  3. R. S. Li
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Editor information

Editors and Affiliations

  1. Phsysikalisches Inst., Universität Münster, Münster, D-4400, Fed. Rep. of Germany

    A. Benninghoven

  2. College of General Education, Osaka University, Osaka 560, Japan

    J. Okano

  3. Department of Applied Physics, Osaka University, Osaka 565, Japan

    R. Shimizu

  4. Philips Research Laboratories, Eindhoven, The Netherlands

    H. W. Werner

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© 1984 Springer-Verlag Berlin Heidelberg

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Koshikawa, T., Ikuta, T., Li, R.S. (1984). Simulation of Ion Sputtering Process on the Binary Alloy. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_8

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  • DOI: https://doi.org/10.1007/978-3-642-82256-8_8

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82258-2

  • Online ISBN: 978-3-642-82256-8

  • eBook Packages: Springer Book Archive

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