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Residual Donor Impurities in Undoped LEC SI-GaAs Crystals

  • K. Kuramoto
  • M. Nakajima
  • T. Kikuta
  • F. Orito
  • H. Emori
  • K. Ishida
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 36)

Abstract

Undoped liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs is a promising substrate for GaAs IC’s . However, high electrical uniformity across a wafer has not yet been attained. The SI mechanism is explained by the compensation of shallow levels with deep levels (1, 2). In order to improve the electrical uniformity, distribution measurements of these levels are required in the first place. However, most studies done so far were limited to the deep levels and little is known about the shallow levels. In this study, SIMS measurements have been carried out to obtain the distribution of residual shallow donor impurities such as Si, S, Se and Te in several wafers. We describe the correlation between the impurity distribution and dislocation density, and a possible origin of resistivity inhomogeneity.

Keywords

Free Carrier Concentration Donor Impurity Shallow Acceptor Liquid Encapsulate Czochralski Localize Vibrational Mode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • K. Kuramoto
    • 1
  • M. Nakajima
    • 1
  • T. Kikuta
    • 1
  • F. Orito
    • 1
  • H. Emori
    • 1
  • K. Ishida
    • 1
  1. 1.Optoelectronics Joint Research LaboratoryNakahara-ku, Kawasaki 211Japan

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