Abstract
The ditribution of impurities introduced during epitaxial growth or by ion implantation and impurity redistribution during subsequent annealing are of great importance due to their relevance to device fabrication [1–4]. Secondary Ion Mass Spectrometry (SIMS) has been used to study the redistribution of dopant level Mn in In1 -XGaXAs. A variety of Ge donor and Mn acceptor doped layers and structures were incorporated during MBE growth of InGaAs layers on InP substrates at 500°C. Portions of each layer were annealed at temperatures of 650°C and 700°C for 4 hours.
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References
C.A. Evans, Jr., V.R. Deline, T.W. Sigmon and A. Lindow: Appl. Phys. Lett. 35, 291 (1979)
R.G. Wilson and C.A. Evans, Jr.: Gallium Arsenide and Related Compounds edited by H.W. Thim (The Institute of Physics, Bristol, 1981)
M. Feng, V. Eu, H. Kanber and W.B. Henderson: J. Electron. Mater. 10, 973 (1981)
H. Kanber, M. Feng and J.M. Whalen: Appl. Phys. Lett. 40, 960 (1981)
E. Silberg, T.Y. Chang, E.A. Caridi, C.A. Evans, Jr., C.J. Hitzman: J. Vac. Sci. Tech. Bl(2), April–June (1983)
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© 1984 Springer-Verlag Berlin Heidelberg
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Hitzman, C.J., Silberg, E., Chang, T.Y., Caridi, E.A. (1984). Effects of Donor Impurities on the Redistribution of Mn Acceptors in In1−xGaxAs. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_75
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DOI: https://doi.org/10.1007/978-3-642-82256-8_75
Publisher Name: Springer, Berlin, Heidelberg
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