The Contribution of SIMS to the Characterization of III-V Compounds

  • A. M. Huber
  • G. Morillot
  • A. Friederich
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 36)


For several years, secondary ion mass spectrometry (SIMS) has been very successfully applied in the electronics industry to the characterization of semiconductor materials. It contributes in particular to the improvement of the III-V materials used in the new electronics industry for microwave and opto-electronic devices. A number of interesting published works provide evidence for this.


Undoped GaAs Hole Profile Proximity Technique Capless Annealing Ganic Vapour Phase Epitaxy 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • A. M. Huber
    • 1
  • G. Morillot
    • 1
  • A. Friederich
    • 1
  1. 1.Thomson-CSF Laboratoire Central de RecherchesOrsayFrance

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